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  1. No Access

    Article

    CVD SYNTHESIS AND THE STRUCTURE OF VERTICALLY ALIGNED CNT ARRAYS

    The structure and morphology of vertically aligned CNT (VACNT) arrays grown by CVD on Fe–Al2O3/Si(001) substrates are studied using scanning and high-resolution transmission electron microscopy (HRTEM) methods a...

    O. I. Semenova, L. I. Fedina, A. K. Gutakovskii… in Journal of Structural Chemistry (2022)

  2. No Access

    Article

    In Situ Reflection Electron Microscopy for the Analysis of Silicon Surface Processes: Sublimation, Electromigration, and Adsorption of Impurity Atoms

    The results of recent studies of the structural morphological transformations of Si(111) and Si(100) surfaces using in situ ultrahigh-vacuum reflection electron microscopy (UHV REM) are presented. It is establ...

    D. I. Rogilo, S. V. Sitnikov, E. E. Rodyakina, A. S. Petrov… in Crystallography Reports (2021)

  3. No Access

    Article

    From Self-Organization of Monoatomic Steps on the Silicon Surface to Subnanometer Metrology

    The article presents how the understanding of the fundamental processes of self-organization and morphological transformations of the atomically clean Si(111) surface as a result of the study using in situ ult...

    D. V. Sheglov, S. V. Sitnikov, L. I. Fedina… in Optoelectronics, Instrumentation and Data … (2020)

  4. No Access

    Article

    Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

    By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of...

    S. V. Sitnikov, E. E. Rodyakina, A. V. Latyshev in Semiconductors (2019)

  5. No Access

    Article

    Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

    The transformation of micropits on large terraces of the Si(111) surface containing no vicinal atomic steps has been investigated by in situ ultrahigh-vacuum reflection electron microscopy upon thermal anneali...

    A. S. Petrov, S. V. Sitnikov, S. S. Kosolobov, A. V. Latyshev in Semiconductors (2019)

  6. No Access

    Article

    Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber

    The effect of homoepitaxial Si(001) growth on the surface morphology during the annealing of a substrate by passing a direct current is examined by in situ high-vacuum reflection electron microscopy at a tempe...

    E. E. Rodyakina, S. V. Sitnikov, D. I. Rogilo, A. V. Latyshev in Russian Microelectronics (2018)

  7. No Access

    Article

    Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

    The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critic...

    S. V. Sitnikov, S. S. Kosolobov, A. V. Latyshev in Semiconductors (2017)

  8. No Access

    Article

    Atomic steps on an ultraflat Si(111) surface upon sublimation

    The kinetics of atomic steps on an ultraflat Si(111) surface is studied by in situ ultrahigh-vacuum reflection electron microscopy at temperatures of 1050–1350°C. For the first time it is experimentally shown ...

    S. V. Sitnikov, A. V. Latyshev, S. S. Kosolobov in Semiconductors (2016)

  9. No Access

    Article

    High-precision nanoscale length measurement

    Modern lithographical methods used to create linear measures for nanometer-range dimensions and the main factors which limit the applications of such gages have been analyzed in the paper. Prospects for develo...

    D. V. Sheglov, S. S. Kosolobov, L. I. Fedina, E. E. Rodyakina… in Nanotechnologies in Russia (2013)