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  1. No Access

    Article

    Van der Waals Heteroepitaxial Growth of Layered SnSe \({}_{\mathbf{2}}\) on Surfaces Si(111) and Bi \({}_{\mathbf{2}}\) Se \({}_{\mathbf{3}}\) (0001)

    Layered SnSe \({}_{2}\) films of nearly 50 and 30 nm in thickness were grown on Si(111) and Bi ...

    S. A. Ponomarev, K. E. Zakhozhev… in Optoelectronics, Instrumentation and Data … (2022)

  2. No Access

    Article

    CHEMICAL STRUCTURE AND FUNCTIONAL PROPERTIES OF AMORPHOUS BORON CARBONITRIDE FILMS

    We report a comprehensive study of the effect of the chemical structure of boron carbonitride films on the variability of their functional characteristics. The BCxNy films are prepared on Si(100) and fused silica...

    V. S. Sulyaeva, E. Ya. Gatapova, A. K. Kozhevnikov… in Journal of Structural Chemistry (2021)

  3. No Access

    Article

    In Situ Reflection Electron Microscopy for the Analysis of Silicon Surface Processes: Sublimation, Electromigration, and Adsorption of Impurity Atoms

    The results of recent studies of the structural morphological transformations of Si(111) and Si(100) surfaces using in situ ultrahigh-vacuum reflection electron microscopy (UHV REM) are presented. It is establ...

    D. I. Rogilo, S. V. Sitnikov, E. E. Rodyakina, A. S. Petrov… in Crystallography Reports (2021)

  4. No Access

    Article

    From Self-Organization of Monoatomic Steps on the Silicon Surface to Subnanometer Metrology

    The article presents how the understanding of the fundamental processes of self-organization and morphological transformations of the atomically clean Si(111) surface as a result of the study using in situ ult...

    D. V. Sheglov, S. V. Sitnikov, L. I. Fedina… in Optoelectronics, Instrumentation and Data … (2020)

  5. No Access

    Article

    Etching Kinetics of Si(111) Surface by Selenium Molecular Beam

    Using in situ ultrahigh vacuum reflection electron microscopy, three modes of the etching kinetics of the Si(111) surface with a selenium molecular beam are revealed. In the low temperature region ( ...

    S. A. Ponomarev, D. I. Rogilo, A. S. Petrov… in Optoelectronics, Instrumentation and Data … (2020)

  6. No Access

    Article

    Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber

    The effect of homoepitaxial Si(001) growth on the surface morphology during the annealing of a substrate by passing a direct current is examined by in situ high-vacuum reflection electron microscopy at a tempe...

    E. E. Rodyakina, S. V. Sitnikov, D. I. Rogilo, A. V. Latyshev in Russian Microelectronics (2018)

  7. No Access

    Article

    Adatom concentration distribution on an extrawide Si(111) terrace during sublimation

    The formation of an adsorption layer on the Si(111) surface during sublimation at temperatures of 1000–1100 °C and subsequent quenching at T = 750 °C is studied by methods of in situ ultr...

    D. I. Rogilo, N. E. Rybin, L. I. Fedina… in Optoelectronics, Instrumentation and Data … (2016)

  8. No Access

    Article

    Nucleation of two-dimensional Si islands near a monatomic step on an atomically clean Si(111)-(7×7) surface

    The process of nucleation of 2D islands near a monatomic step at the initial stage of growing of a silicon film on the Si(111)-(7 × 7) surface is studied by means of in situ ultrahighvacuum reflection electron mi...

    D. I. Rogilo, N. E. Rybin, S. S. Kosolobov… in Optoelectronics, Instrumentation and Data … (2016)