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Article
Biosensors Based on SOI Nanowire Transistors for Biomedicine and Virusology
This article contains the results of research on the topical problem of highly sensitive express registration of biological objects using field-effect transistors with the surface open for analyte access, whic...
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Article
Validation of Heterophase RNA Analysis with the Use of a Silicon-on-Insulator Biosensor
The analysis of nucleic acids remains to be a topical trend in the development of medical diagnostics. Contemporary ultrasensitive diagnostic systems provide the conversion of a specific interaction into a har...
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Article
Identifying the Vaccinia Virus with the Use of a Nanowire Silicon-on-Insulator Biosensor
The results of identifying the vaccinia virus with the use of nanowire biosensors manufactured on the basis of silicon-on-insulator (SOI) films were presented. In our experiments, the vaccinia virus, the LIVP ...
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Article
Surface Modification of SOI Sensors for the Detection of RNA Biomarkers
A new type of surface modification of multichannel sensors on a silicon-on-insulator base, which includes the use of a carbonyldiimidazole bifunctional reagent for the formation of an interfacial layer instead...
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Article
Surface Preparation as a Step in the Fabrication of Biosensors Based on Silicon Nanowire Field-Effect Transistors: Review
Issues concerning the detection of biomolecular targets by biosensors based on silicon nanowire field-effect transistors are discussed. We list and discuss steps in the surface preparation of silicon nanowires...
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Article
Profiling Mobility Components near the Heterointerfaces of Thin Silicon Films
A method for profiling the components of effective carrier mobility μeff determined by scattering at surface phonons and the roughness of thin film/dielectric interfaces is proposed. The method is based on contro...
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Article
Detection of Ebola Virus VP40 Protein using a Nanowire SOI Biosensor
Nanowire SOI biosensors are used to detect the Ebola virus VP40 protein by identifying its immune complexes with specific monoclonal antibodies (MCAs). It is shown that the reaction of specific interaction bet...
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Article
Silicon p-n-Diode Based Electro-Optic Modulators
A method for forming p-n-diode based silicon electro-optic modulators using local oxidation is tested. It is shown that the local oxidation of silicon allows forming a rib waveguide as a smoothed trapezoid, in co...
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Article
Electron mobility in the inversion layers of fully depleted SOI films
The dependences of the electron mobility μeff in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N ...
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Article
Optimization of the response of nanowire biosensors
Nanowire field-effect transistors are highly sensitive sensor elements used for qualitative and quantitative analyses of biological and chemical substances. Optimization of the operation of the sensor is one o...
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Article
Density dependence of electron mobility in the accumulation mode for fully depleted SOI films
The electron mobility µeff in the accumulation mode is investigated for undepleted and fully depleted double-gate n +–n–n + silicon-on-insulator (SO...
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Article
Quantum corrections to threshold voltages for fully depleted SOI transistors with two independent gates
The linear charge coupling effect of threshold voltages V th of the bottom (field) gate, i.e., a substrate of the silicon-on-insulator structure of fully depleted n-MIC transistors on a lightly do...
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Article
SOI-nanowire biosensor for detection of D-NFATc1 protein
The nanowire (NW) detection is one of the fast-acting and high-sensitive methods, which can recognize potentially relevant protein molecules. A NW-biosensor based on the silicon-on-insulator (SOI)-structures h...
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Article
SOI nanowire transistor for detection of D-NFATc1 molecules
Nanowire (NW) detection is one of the fast and highly sensitive methods. An NW biosensor based on silicon-on-insulator (SOI) structures are used in the reported study for real-time label-free biospecific detec...
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Article
Formation of conductive layers inside diamond by hydrogen ion implantation and subsequent thermal treatment at low or high pressures
(111) synthetic HPTP diamond plates are irradiated by H 2 + 50 keV ions in the range of the fluences of 1−13 × 1016 sm−2 and annealed in vacuum at 1 mPa (VPHT,...
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Chapter
SOI Nanowire Transistors for Femtomole Electronic Detectors of Single Particles and Molecules in Bioliquids and Gases
The need for high-throughput, label-free multiplexed sensors for chemical and biological sensing has increased in the last decade in the newer applications like healthcare, genomic and proteomic diagnostics, e...
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Article
Silicon nanowire transistors for electron biosensors
A method of nanostructuring of silicon-on-insulator (SOI) layers on the basis of gas etching in XeF2 or SF6:CFCl3 is developed for the purpose of obtaining SOI nanowire structures. SOI nanowire transistors (SOI N...
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Article
Silicon-on-insulator nanotransistors with two independent gates
The results of numerical simulation of electrical characteristics of silicon-on-insulator MOSFET nanotransistors with two independent gates are reported. The cases of grounded and floating bases with the surfa...
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Chapter and Conference Paper
Radiation Effects in SOI: Irradiation by High Energy Ions and Electrons
The following radiation effects are considered in silicon- on- insulator structures irradiated with either 2.0 MeV electrons or 245 MeV multi charged Kr ions in the dose range of 105 – 106 rad: (1) accumulation o...
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Chapter and Conference Paper
Total Dose Behavior of Partially Depleted Delecut SOI MOSFETs
The effect of gamma-irradiation on the electrical characteristics of MOSFETs fabricated in DeleCut SOI wafers was defined. Properties of gate-oxide and BOX (buildup of radiation-induced charge in the oxide, in...
