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Van der Waals Heteroepitaxial Growth of Layered SnSe\({}_{\mathbf{2}}\) on Surfaces Si(111) and Bi\({}_{\mathbf{2}}\)Se\({}_{\mathbf{3}}\)(0001)

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Optoelectronics, Instrumentation and Data Processing Aims and scope

Abstract

Layered SnSe\({}_{2}\) films of nearly 50 and 30 nm in thickness were grown on Si(111) and Bi\({}_{2}\)Se\({}_{3}\)(0001) substrates, respectively, with the use of in situ reflection electron microscopy. In both cases, the growth of films occurred by a multilayer mechanism with the formation of pronounced hills. The height of atomic steps was measured by atomic force microscopy (AFM) as 0.6 nm, which corresponded to the SnSe\({}_{2}\) layer thickness. The surface ex situ AFM image of SnSe\({}_{2}\) grown on a Si(111) substrate demonstrated a high concentration of screw dislocations in the film (\(\sim\)12 \(\mu\)m\({}^{-2}\)) and the existence of domains with a triangular faceting of steps, which had three types of orientation with respect to the substrate. The growth of a SnSe\({}_{2}\) film on single crystal Bi\({}_{2}\)Se\({}_{3}\) surface(0001) was revealed to occur with the formation of hills, which had a hexangular faceting and were identically oriented with respect to the substrate. The hills were formed by the multilayer mechanism both in the regions, where screw dislocations cropped out, and due to the periodic nucleation of 2D islands on the highest terraces, which attained 1 \(\mu\)m in size. Using Raman scattering, the films on both substrates were shown to have the spectra typical for the 1T-SnSe\({}_{2}\) phase.

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ACKNOWLEDGMENTS

This study was carried out on the equipment of the Shared Facilities Center ‘‘Nanostructures’’ in the Rzhanov Institute of Semiconductors (Siberian Branch, Russian Academy of Sciences).

Funding

The experiments on surface Si(111) were supported by the state assignment (project no. FWGW-2021-0007), and the experiments on surface Bi\({}_{2}\)Se\({}_{3}\)(0001) were sponsored by the Russian Science Foundation (grant no. 22-72-10124).

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    S. A. Ponomarev, K. E. Zakhozhev, D. I. Rogilo, N. N. Kurus’, D. V. Sheglov, A. G. Milekhin & A. V. Latyshev

  2. Novosibirsk State University, 630090, Novosibirsk, Russia

    S. A. Ponomarev, K. E. Zakhozhev & A. V. Latyshev

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  1. S. A. Ponomarev
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  2. K. E. Zakhozhev
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  3. D. I. Rogilo
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  4. N. N. Kurus’
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  5. D. V. Sheglov
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  6. A. G. Milekhin
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  7. A. V. Latyshev
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Correspondence to S. A. Ponomarev.

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Translated by E. Glushachenkova

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Ponomarev, S.A., Zakhozhev, K.E., Rogilo, D.I. et al. Van der Waals Heteroepitaxial Growth of Layered SnSe\({}_{\mathbf{2}}\) on Surfaces Si(111) and Bi\({}_{\mathbf{2}}\)Se\({}_{\mathbf{3}}\)(0001). Optoelectron.Instrument.Proc. 58, 564–570 (2022). https://doi.org/10.3103/S8756699022060097

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