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  1. Article

    Open Access

    Growth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation

    For the first time, the possibility of producing silicene on CaF2/Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi2 with hex...

    A. F. Zinovieva, V. A. Zinovyev, A. V. Katsyuba, V. A. Volodin… in JETP Letters (2024)

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  2. Article

    Open Access

    Manifestation of “Slow” Light in the Photocurrent Spectra of Ge/Si Quantum Dot Layers Combined with a Photonic Crystal

    The spectral characteristics of the photocurrent in the near-infrared range in vertical Ge/Si p–i–n photodiodes with Ge quantum dots embedded in a two-dimensional photonic crystal are investigated. The interactio...

    A. I. Yakimov, V. V. Kirienko, A. V. Dvurechenskii, D. E. Utkin in JETP Letters (2023)

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  3. No Access

    Article

    Electron-Beam Radiation Effects at the Molecular-Beam Epitaxial Growth of CaF2 Film on Silicon

    The formation of CaSi2 films on Si(111) by molecular-beam epitaxy (MBE) under fast electron irradiation of CaF2 layers is investigated in the article. The mechanisms and regularities of the changes in the structu...

    A. V. Dvurechenskii, A. V. Kacyuba… in Bulletin of the Russian Academy of Science… (2023)

  4. Article

    Open Access

    Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix

    The possibility of fabricating two-dimensional Si layers on a CaF2/Si(111) film by molecular beam epitaxy is studied. The growth conditions, under which the regions of two-dimensional Si layers are formed, are fo...

    V. A. Zinovyev, A. F. Zinovieva, V. A. Volodin, A. K. Gutakovskii… in JETP Letters (2022)

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  5. No Access

    Article

    Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate

    This paper presents the results of studies of the luminescence properties of structures with Ge(Si) quantum dots (QDs), in which the pit-patterned surface of a silicon-on-insulator substrate serves both for th...

    Zh. V. Smagina, V. A. Zinovyev, M. V. Stepikhova, A. V. Peretokin… in Semiconductors (2022)

  6. No Access

    Article

    Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates

    The specific features of growth and the structural and optical properties of GaSi2 layers formed by the successive deposition of Si and CaF2 onto a Si(111) substrate with simultaneous irradiation with a high-ener...

    V. A. Zinovyev, A. V. Kacyuba, V. A. Volodin, A. F. Zinovieva… in Semiconductors (2021)

  7. No Access

    Article

    Scientific Heritage of S. V. Bogdanov

    This article is dedicated to the famous physicist, founder of the school of acoustoelectronics and acoustooptics, Corresponding Member of the Russian Academy of Sciences Sergei Vasilievich Bogdanov in connecti...

    B. I. Kidyarov, E. A. Kolosovsky… in Optoelectronics, Instrumentation and Data … (2021)

  8. No Access

    Article

    Effect of Adhesive Layers on Photocurrent Enhancement in Near-Infrared Quantum-Dot Photodetectors Coupled with Metal-Nanodisk Arrays

    Plasmon-enhanced planar Ge/Si photodetectors with Ge quantum dots on silicon-on-insulator substrates coupled with regular arrays of metal nanodisks on their surface are developed. It is found that the introduc...

    A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, A. V. Dvurechenskii… in Semiconductors (2021)

  9. No Access

    Article

    Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal

    It has been found that the introduction of layers of Ge/Si quantum dots in a two-dimensional photonic crystal leads to a strong (up to a factor of 5) increase in the photocurrent in the near infrared range. Th...

    A. I. Yakimov, A. A. Bloshkin, V. V. Kirienko, A. V. Dvurechenskii… in JETP Letters (2021)

  10. No Access

    Article

    Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots

    Heterostructures with annular groups of GeSi quantum dots grown on Si(001) substrates with GeSi nanodisks embedded beneath the surface are investigated by the electron spin resonance technique. It is demonstra...

    A. F. Zinovieva, V. A. Zinovyev, A. V. Nenashev, A. A. Shklyaev… in JETP Letters (2021)

  11. No Access

    Article

    Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

    Space-arranged arrays of pits on Si(001) substrates were prepared using electron-beam lithography and plasma chemical etching. The positions of pits were arrange to the square and hexagonal lattices with a var...

    Zh. V. Smagina, V. A. Zinoviev, S. A. Rudin, E. E. Rodyakina… in Semiconductors (2020)

  12. No Access

    Article

    Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

    The luminescence properties of arrays of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups, including those embedded in two-dimensional photonic crystals, are studied. It is shown t...

    Zh. V. Smagina, A. V. Novikov, M. V. Stepikhova, V. A. Zinovyev… in Semiconductors (2020)

  13. No Access

    Article

    Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals

    Two different approaches to the integration of self-assembled Ge(Si) quantum dots into two-dimensional photonic crystals are considered. One approach includes the synthesis of an ordered array of Ge(Si) quantu...

    Zn. V. Smagina, V. A. Zinovyev, E. E. Rodyakina, B. I. Fomin… in Semiconductors (2019)

  14. No Access

    Article

    Plasmonic Field Enhancement by Metallic Subwave Lattices on Silicon in the Near-Infrared Range

    The enhancement of the electric field in plasmonic nanostructures on a Si substrate in the near-infrared range is studied theoretically. Two-dimensional square arrays of circular holes of various diameters in ...

    A. I. Yakimov, A. A. Bloshkin, A. V. Dvurechenskii in JETP Letters (2019)

  15. No Access

    Article

    Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots

    Ge/Si quantum dot (QD) structures doped with Mn have been tested by the EPR method to find the optimal conditions for formation of the diluted magnetic semiconductor (DMS) phase inside QDs. The effect of Mn do...

    A. F. Zinovieva, V. A. Zinovyev, N. P. Stepina, A. V. Katsuba… in JETP Letters (2019)

  16. No Access

    Article

    XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots

    Using X-ray absorption near edge structure spectroscopy, extended X-ray absorption fine structure spectroscopy, atomic force microscopy, and Rutherford backscattering spectroscopy, the features of the microstr...

    S. B. Erenburg, S. V. Trubina, V. A. Zvereva… in Journal of Experimental and Theoretical Ph… (2019)

  17. No Access

    Article

    Plasmon Enhancement of the Electric Field in Mid-Infrared Ge/Si Quantum-Dot Photodetectors with Different Thicknesses of the Active Region

    The spatial distribution of the electric field in Ge/Si photodetector heterostructures coated with a gold film containing a regular two-dimensional array of subwavelength apertures is calculated by the finite-...

    A. A. Bloshkin, A. I. Yakimov, A. V. Dvurechenskii in Semiconductors (2019)

  18. No Access

    Article

    Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands

    Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs...

    V. A. Zinovyev, A. F. Zinovieva, A. V. Katsuba, Zh. V. Smagina… in Semiconductors (2018)

  19. No Access

    Article

    Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

    The nucleation of three-dimentional Ge islands formed on a pre-patterned Si substrate with an array of round pits is studied. It is found that the Ge islands nucleate within pits with pointed bottoms and along...

    S. A. Rudin, Zh. V. Smagina, V. A. Zinovyev, P. L. Novikov… in Semiconductors (2018)

  20. No Access

    Article

    Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface

    A method for creation of Ge/Si structures with space-arranged nanoislands by heteroepitaxy on the pre-patterned Si(001) substrates with a square grid of the etched pits is developed. The influence of depth and...

    Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina… in Semiconductors (2018)

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