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Electron-Beam Radiation Effects at the Molecular-Beam Epitaxial Growth of CaF2 Film on Silicon

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The formation of CaSi2 films on Si(111) by molecular-beam epitaxy (MBE) under fast electron irradiation of CaF2 layers is investigated in the article. The mechanisms and regularities of the changes in the structure and elemental composition of the CaF2/CaSi2/Si system under the influence of an electron beam are established in the present contribution, both directly during the CaF2 growth and after the CaF2 film formation. The method of solid-phase extraction (SPE) is proposed with a subsequent Si sputtering during the electron-beam radiation of the CaF2 film, which leads to a decrease in the CaSi2 film surface roughness and defects density.

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Funding

The research was supported by the Russian Foundation for Basic Research and “Rosatom” State Corporation, project no. 20-21-00028.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    A. V. Dvurechenskii, A. V. Kacyuba, G. N. Kamaev & V. A. Volodin

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  1. A. V. Dvurechenskii
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  2. A. V. Kacyuba
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  3. G. N. Kamaev
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  4. V. A. Volodin
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Correspondence to A. V. Dvurechenskii.

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Dvurechenskii, A.V., Kacyuba, A.V., Kamaev, G.N. et al. Electron-Beam Radiation Effects at the Molecular-Beam Epitaxial Growth of CaF2 Film on Silicon. Bull. Russ. Acad. Sci. Phys. 87, 809–812 (2023). https://doi.org/10.3103/S106287382370199X

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  • DOI: https://doi.org/10.3103/S106287382370199X

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