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  1. Article

    Open Access

    Interdisk spacing effect on resonant properties of Ge disk lattices on Si substrates

    The light reflection properties of Ge disk lattices on Si substrates are studied as a function of the disk height and the gap width between disks. The interdisk spacing effect is observed even at such large ga...

    A. A. Shklyaev, D. E. Utkin, A. V. Tsarev, S. A. Kuznetsov… in Scientific Reports (2022)

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  2. No Access

    Article

    Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing

    The thermal stability of silicon-on-insulator films with a thickness of 4.7  and 2.2 nm is studied as a function of annealing temperature in the range of Т = 800–1200°C by scanning electron microscopy and spectra...

    I. E. Tyschenko, E. V. Spesivtsev, A. A. Shklyaev, V. P. Popov in Semiconductors (2022)

  3. No Access

    Article

    Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles

    Antireflection properties of subwavelength-sized dielectric SiGe particles grown on Si(100) substrates using the dewetting phenomenon are studied. The average particle size has been set by the amount of deposi...

    D. E. Utkin, A. V. Tsarev, E. N. Utkin… in Optoelectronics, Instrumentation and Data … (2021)

  4. No Access

    Article

    Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots

    Heterostructures with annular groups of GeSi quantum dots grown on Si(001) substrates with GeSi nanodisks embedded beneath the surface are investigated by the electron spin resonance technique. It is demonstra...

    A. F. Zinovieva, V. A. Zinovyev, A. V. Nenashev, A. A. Shklyaev… in JETP Letters (2021)

  5. No Access

    Article

    Double-Channel Electron Transport in Suspended Quantum Point Contacts with in-Plane Side Gates

    The conductance of a suspended quantum point contact fabricated on the basis of GaAs/AlGaAs heterostructures with a two-dimensional electron gas and equipped with side gates separated from the constriction usi...

    D. A. Pokhabov, A. G. Pogosov, E. Yu. Zhdanov, A. K. Bakarov… in Semiconductors (2020)

  6. Article

    Open Access

    Dewetting behavior of Ge layers on SiO2 under annealing

    The solid-state dewetting phenomenon in Ge layers on SiO2 is investigated as a function of layer thickness dGe (from 10 to 86 nm) and annealing temperature. The dewetting is initiated at about 580–700 °C, dependi...

    A. A. Shklyaev, A. V. Latyshev in Scientific Reports (2020)

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  7. No Access

    Article

    On-Chip Piezoelectric Actuation of Nanomechanical Resonators Containing a Two-Dimensional Electron Gas

    The on-chip piezoelectric actuation is experimentally shown to be a suitable method for driving the resonant vibrations of AlGaAs/GaAs-based nanomechanical resonators containing a two-dimensional electron gas....

    A. A. Shevyrin, A. K. Bakarov, A. A. Shklyaev, A. S. Arakcheev, M. Kurosu… in JETP Letters (2019)

  8. No Access

    Article

    Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region

    Four pairs of p–i–n structures based on polymorphous Si:H (pm-Si:H) are fabricated by the method of plasma-enhanced chemical vapor deposition. The structures in each pair are grown on the same substrate so that o...

    G. K. Krivyakin, V. A. Volodin, A. A. Shklyaev, V. Mortet… in Semiconductors (2017)

  9. No Access

    Article

    Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing

    The phase and elemental compositions of GeSi heterostructures deposited on non-refractory substrates are analyzed by using a non-destructive express technique, i.e., the Raman spectroscopy. It is shown that ap...

    A. V. Dvurechenskii, V. A. Volodin… in Optoelectronics, Instrumentation and Data … (2016)

  10. Article

    Open Access

    Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100)

    We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800–1100 °C of 30–150 nm Ge layers deposited on Si(100) at 400–500 °C. It is fo...

    A. A. Shklyaev, A. V. Latyshev in Nanoscale Research Letters (2016)

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  11. No Access

    Article

    Nucleation and growth of ordered groups of SiGe quantum dots

    An approach for the formation of ordered groups of Ge nanoislands (quantum dots, QDs) upon epitaxial growth on the surface of a heterostructure constituted by a Si (100) substrate having preliminarily formed s...

    V. A. Zinovyev, A. V. Dvurechenskii, P. A. Kuchinskaya, V. A. Armbrister… in Semiconductors (2015)

  12. No Access

    Article

    Formation and structural features of silicon quantum dots in germanium

    The formation of Si quantum dots on Ge is studied. Fundamental differences were found between the nucleation and growth of quantum dots on substrates with different orientations, related to both the formation ...

    N. P. Stepina, A. F. Zinov’eva… in Optoelectronics, Instrumentation and Data … (2013)

  13. No Access

    Article

    Effect of dislocations on the shape of islands during silicon growth on the oxidized Si(111) surface

    The formation of dislocation-rich and dislocation-free silicon islands during growth in the absence of mechanical stresses has been studied by scanning tunneling microscopy. The rounded shape of islands obtain...

    A. A. Shklyaev, K. N. Romanyuk, A. V. Latyshev, A. V. Arzhannikov in JETP Letters (2011)

  14. No Access

    Article

    Stability of the (0001) surface of the Bi2Se3 topological insulator

    The inertness of the cleaved (0001) surface of a Bi2Se3 single crystal to oxidation has been demonstrated using X-ray photoelectron spectroscopy, as well as atomic-force and scanning tunneling microscopy and spec...

    O. E. Tereshchenko, K. A. Kokh, V. V. Atuchin, K. N. Romanyuk… in JETP Letters (2011)

  15. No Access

    Article

    Influence of triplet states on the spectrum of collective spin-polaron excitations in a 2D kondo lattice

    The normal and superconducting phases of the ensemble of spin polarons in a two-dimensional Kondo lattice have been considered under the conditions when the hop** integral is comparable to the s-d exchange inte...

    V. V. Val’kov, A. A. Shklyaev, M. M. Korovushkin… in Physics of the Solid State (2011)

  16. No Access

    Article

    Quantum fluctuations in a two-dimensional antiferromagnet with four-spin interaction of cubic symmetry

    The excitation spectrum of a non-Heisenberg 2D antiferromagnet with the four-spin interaction of cubic symmetry has been calculated in the first order of 1/2S. It has been shown that, for weak anisotropy, the Née...

    V. V. Val’kov, T. A. Val’kova, A. A. Shklyaev in Physics of the Solid State (2011)

  17. No Access

    Article

    Formation of Ge clusters at a Si(111)-Bi- \(\sqrt 3 \times \sqrt 3\) surface

    The possibility of the formation of a dense array of size-uniform Ge clusters on the Si(111) surface in the presence of the Bi surfactant has been demonstrated using scanning tunneling microscopy. It has been ...

    K. N. Romanyuk, A. A. Shklyaev, B. Z. Olshanetsky, A. V. Latyshev in JETP Letters (2011)

  18. No Access

    Article

    1.5–1.6 μm photoluminescence of silicon layers with a high density of lattice defects

    This study is concerned with photoluminescence of nanostructured silicon layers that emit radiation in the wavelength range 1.5–1.6 μm due to optical transitions to deep levels of recombination centers produce...

    A. A. Shklyaev, A. V. Latyshev, M. Ichikawa in Semiconductors (2010)

  19. No Access

    Article

    Opto-Electronic Properties of Ge and Si Related Nanostructures on Ultrathin Si Oxide Covered Si Surfaces

    We present a method to form semiconductor nanodots on Si substrates by using ultrathin Si oxide technology and the results on their opto-electronic properties. We can form ultra-small semiconductor nanodots wi...

    M. Ichikawa, Y. Nakamura, A. A. Shklyaev, N. Fu**oki in MRS Online Proceedings Library (2009)

  20. No Access

    Chapter

    Interaction of O2 and N2O with Si During the Early Stages of Oxide Formation

    The interaction of 02 and N20 with silicon surfaces is studied using optical methods such as ellipsometry and second-harmonic generation. These methods give the integral characteristics of the process in the w...

    A. A. Shklyaev in Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (1998)

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