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Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates

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Abstract

The specific features of growth and the structural and optical properties of GaSi2 layers formed by the successive deposition of Si and CaF2 onto a Si(111) substrate with simultaneous irradiation with a high-energy electron beam are studied. The Raman spectra recorded for the electron-beam-irradiated regions exhibit peaks characteristic of CaSi2 crystal layers. Studies of the surface morphology of the structures formed show that, under the conditions of synthesis chosen, the formation of CaSi2 layers upon electron irradiation proceeds by a two-dimensional layer mechanism. The photoluminescence spectra recorded for the regions modified by the electron beam greatly differ from the spectra recorded outside these regions.

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ACKNOWLEDGMENTS

We thank the Multiple-access center “Nanostructures”, Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, and the Multiple-access center “High Technologies and Analytics of Nanosystems”, Novosibirsk State University, for placing at our disposal the measuring equipment.

Funding

The study was supported by the Russian Foundation for Basic Research, project no. 20-52-00016, and the Belarussian Republican Foundation for Fundamental Research, project no. F20R-082.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    V. A. Zinovyev, A. V. Kacyuba, V. A. Volodin, A. F. Zinovieva, S. G. Cherkova, Zh. V. Smagina & A. V. Dvurechenskii

  2. Novosibirsk State University, 630090, Novosibirsk, Russia

    V. A. Volodin, A. F. Zinovieva & A. V. Dvurechenskii

  3. Novosibirsk State Technical University, 630073, Novosibirsk, Russia

    A. Y. Krupin

  4. Scientific-Practical Materials Research Center, National Academy of Sciences of Belarus, 220072, Minsk, Belarus

    O. M. Borodavchenko, V. D. Zhivulko & A. V. Mudryi

Authors
  1. V. A. Zinovyev
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  2. A. V. Kacyuba
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  3. V. A. Volodin
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  4. A. F. Zinovieva
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  5. S. G. Cherkova
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  6. Zh. V. Smagina
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  7. A. V. Dvurechenskii
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  8. A. Y. Krupin
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  9. O. M. Borodavchenko
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  10. V. D. Zhivulko
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  11. A. V. Mudryi
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Corresponding author

Correspondence to V. A. Zinovyev.

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The authors declare that they have no conflict of interest.

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Translated by E. Smorgonskaya

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Zinovyev, V.A., Kacyuba, A.V., Volodin, V.A. et al. Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates. Semiconductors 55, 808–811 (2021). https://doi.org/10.1134/S1063782621090268

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  • DOI: https://doi.org/10.1134/S1063782621090268

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