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  1. Article

    Open Access

    Growth of Silicene by Molecular Beam Epitaxy on CaF2/Si(111) Substrates Modified by Electron Irradiation

    For the first time, the possibility of producing silicene on CaF2/Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi2 with hex...

    A. F. Zinovieva, V. A. Zinovyev, A. V. Katsyuba, V. A. Volodin… in JETP Letters (2024)

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    Article

    XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots

    Using X-ray absorption near edge structure spectroscopy, extended X-ray absorption fine structure spectroscopy, atomic force microscopy, and Rutherford backscattering spectroscopy, the features of the microstr...

    S. B. Erenburg, S. V. Trubina, V. A. Zvereva… in Journal of Experimental and Theoretical Ph… (2019)

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    Article

    Analysis of the temperature instability of an InAs/GaAs heterostructure during the process of molecular-beam epitaxy

    It is established that, during the process of the molecular-beam epitaxy of InAs on a GaAs substrate, additional absorption of thermal radiation occurs as the film thickness increases, and, as a consequence, t...

    A. V. Katsyuba, A. A. Velichko… in Journal of Surface Investigation. X-ray, S… (2014)

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    Article

    Influence of the surface microroughness of a Si(001) substrate on the morphology of CaF2 epitaxial layers under high-temperature growth conditions

    The influence of the surface microroughness of Si(001) substrates on the morphology of CaF2 epitaxial layers is investigated in the high-temperature growth mode. The atomic-force microscopy method is used to demo...

    A. A. Velichko, V. A. Ilyushin… in Journal of Surface Investigation. X-ray, S… (2013)