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Metal-insulator transition in n-3C-SiC epitaxial films

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

n-Type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and magnetoresistance of the films have been studied in relation to their do** level and structural perfection. It was found that a metal-insulator transition occurs in the n-3C-SiC layer at uncompensated donor concentrations N d − N a ≤ 3 × 1017 cm−3.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation

    A. A. Lebedev, P. L. Abramov, N. V. Agrinskaya, V. I. Kozub, A. N. Kuznetsov, S. P. Lebedev, G. A. Oganesyan, A. S. Tregubova, A. V. Chernyaev & D. V. Shamshur

  2. Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russian Federation

    M. O. Skvortsova

Authors
  1. A. A. Lebedev
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  2. P. L. Abramov
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  3. N. V. Agrinskaya
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  4. V. I. Kozub
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  5. A. N. Kuznetsov
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  6. S. P. Lebedev
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  7. G. A. Oganesyan
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  8. A. S. Tregubova
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  9. A. V. Chernyaev
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  10. D. V. Shamshur
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  11. M. O. Skvortsova
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Corresponding author

Correspondence to A. A. Lebedev.

Additional information

Original Russian Text © A.A. Lebedev, P.L. Abramov, N.V. Agrinskaya, V.I. Kozub, A.N. Kuznetsov, S.P. Lebedev, G.A. Oganesyan, A.S. Tregubova, A.V. Chernyaev, D.V. Shamshur, M.O. Skvortsova, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 3, pp. 337–341.

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Lebedev, A.A., Abramov, P.L., Agrinskaya, N.V. et al. Metal-insulator transition in n-3C-SiC epitaxial films. Semiconductors 43, 318–322 (2009). https://doi.org/10.1134/S1063782609030117

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  • DOI: https://doi.org/10.1134/S1063782609030117

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