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  1. No Access

    Article

    Gettering Effect in Cr/4H–SiC UV Photodetectors under Ptoton Irradiation with E = 15 MeV

    The mechanism of structure transformation in Cr/4H–SiC UV photo detectors, which is responsi-ble for the cyclic gettering of radiation defects, under repeated proton irradiation, is proposed in this work.

    I. P. Nikitina, E. V. Kalinina, V. V. Zabrodski in Technical Physics (2023)

  2. No Access

    Article

    Templates for Homoepitaxial Growth of 3C-SiC Obtained by Direct Bonding of Silicon Carbide Wafers of Differing Polytype

    An approach of direct bonding of SiC wafers of differing polytypes has been implemented in order to create a template for cubic 3C-SiC homo epitaxy. Hetero epitaxial 3C-SiC layers grown by chemical vapor depositi...

    M. G. Mynbaeva, D. G. Amelchuk, A. N. Smirnov, I. P. Nikitina… in Semiconductors (2023)

  3. No Access

    Article

    Study of Heavily Doped n-3C-SiC Epitaxial Films Grown on 6H-SiC Semi-Insulating Substrates by Sublimation Method

    Heavily doped 3C-SiC films based on semi-insulating 6H-SiC substrates were obtained by sublimation epitaxy. The structural perfection of the obtained samples was monitored by X-ray diffractometry. The measurement...

    A. A. Lebedev, V. Yu. Davydov, I. A. Eliseev, S. P. Lebedev… in Semiconductors (2023)

  4. No Access

    Article

    Irradiation with Argon Ions of Cr/4H-SiC Photodetectors

    The results of the effect of irradiation with Ar ions on the structural, electrophysical, and optical characteristics of ultraviolet Cr/4H-SiC photodetectors in the spectral range 200 to 400 nm are presented. Aft...

    E. V. Kalinina, M. F. Kudoyarov, I. P. Nikitina, E. V. Dementyeva… in Semiconductors (2022)

  5. No Access

    Article

    Structural, Electrical, and Optical Properties of 4H–SiC for Ultraviolet Photodetectors

    The results of investigations of initial n-4H–SiC structures by various methods are presented. The structures represent a highly doped n+ substrate with epitaxial layers 5 μm thick grown by chemical vapor deposit...

    E. V. Kalinina, A. A. Katashev, G. N. Violina, A. M. Strelchuk… in Semiconductors (2020)

  6. No Access

    Article

    Structural and Optical Characteristics of 4H-SiC UV Detectors Irradiated with Argon Ions

    The results of a study into the effect of irradiation with heavy Ar ions on the structural and optical characteristics of 4H-SiC are presented. It is shown that even upon single-time irradiation with 53-MeV Ar io...

    E. V. Kalinina, M. F. Kudoyarov, I. P. Nikitina, E. V. Ivanova… in Semiconductors (2020)

  7. No Access

    Article

    Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors

    The influence exerted by the carrier concentration in the range (1–50) × 1014 cm–3 in n-4H-SiC chemical-vapor deposited (CVD) epitaxial layers on the spectral characteristics of UV photodetectors with Cr Schottky...

    E. V. Kalinina, G. N. Violina, I. P. Nikitina, E. V. Ivanova… in Semiconductors (2020)

  8. No Access

    Article

    Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers

    For the first time, comprehensive comparative investigations of ultraviolet photodetectors with Cr Schottky barriers formed on 4H-SiC epitaxial layers are carried out by the X-ray and optical methods before and a...

    E. V. Kalinina, G. N. Violina, I. P. Nikitina, M. A. Yagovkina… in Semiconductors (2019)

  9. No Access

    Article

    A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC

    Photoluminescence (PL) spectra have been studied in 3C-SiC/4H-SiC heterostructures and 3C‑SiC single crystals. It was shown that epitaxial 3C-SiC layers grown on 4H-SiC substrates have a markedly poorer crystal p...

    A. A. Lebedev, I. P. Nikitina, N. V. Seredova, N. K. Poletaev… in Technical Physics Letters (2019)

  10. No Access

    Article

    Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers

    The effects of 8-MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates are studied. Changes in the sample parameters were recorded by the Hall-effect method...

    A. A. Lebedev, B. Ya. Ber, G. A. Oganesyan, S. V. Belov, S. P. Lebedev… in Semiconductors (2017)

  11. No Access

    Article

    Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates

    The method of chloride epitaxy is employed to grow β-Ga2O3 epitaxial layers on a c-sapphire substrate. Purified dry air is used as the source of oxygen. The layers are studied using the methods of X-ray diffracti...

    V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, Sh. Sh. Sharofidinov… in Semiconductors (2016)

  12. No Access

    Article

    On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy

    The main problem of the epitaxial growth of thick AlN layers on a Si substrate consists in the formation of cracks, which complicates the application of structures of this kind in the fabrication of semiconduc...

    Sh. Sh. Sharofidinov, V. I. Nikolaev, A. N. Smirnov, A. V. Chikiryaka… in Semiconductors (2016)

  13. Article

    Physical Properties of Bulk GaN Crystals Grown by HVPE

    Free standing GaN platelets were fabricated by hydride vapor phase epitaxy (HVPE). The platelets having a current maximum size of 7×6×0.1 mm3 were obtained by HVPE growth of ~100 µm thick GaN layers on SiC substr...

    Yu.V. Melnik, K.V. Vassilevski… in MRS Internet Journal of Nitride Semiconduc… (2014)

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  14. No Access

    Article

    GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique

    In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown...

    V. A. Sukhoveyev, V. A. Ivantsov, I. P. Nikitina… in MRS Online Proceedings Library (2012)

  15. No Access

    Article

    Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions

    The structure of (p)3C-SiC-(n)6H-SiC epitaxial structures obtained by sublimation epitaxy in vacuum on 6H-SiC substrates was studied by methods of X-ray topography, X-ray diffraction, and transmission electron mi...

    A. A. Lebedev, G. N. Mosina, I. P. Nikitina, N. S. Savkina… in Technical Physics Letters (2001)

  16. Article

    GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique

    In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown...

    V. A. Sukhoveyev, V. A. Ivantsov… in MRS Internet Journal of Nitride Semiconduc… (2000)

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  17. No Access

    Article

    Electrical characteristics and structural properties of ohmic contacts to p-type 4H-SiC epitaxial layers

    Epitaxial films grown by low-temperature liquid phase epitaxy on p-type 4H-SiC were used as strongly doped subcontact layers for making low-resistance contacts to the p-type material. The layers had a bulk resist...

    K. V. Vasilevskii, S. V. Rendakova, I. P. Nikitina, A. I. Babanin… in Semiconductors (1999)

  18. No Access

    Article

    GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts

    Nearly isoperiodic solitary Ga1−x InxAsySb1−y /GaSb heterostructures, in which the composition of the solid solution should be found inside the region of spinodal decay (x⩽0.4), were grown by liquid-phase epitaxy...

    V. I. Vasil’ev, D. Akhmedov, A. G. Geryagin, V. I. Kuchinskii… in Semiconductors (1999)

  19. No Access

    Article

    Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy

    We investigated silicon carbide (SiC) epitaxial layers grown by liquid phase epitaxy (LPE). The layers were grown on 6H-SiC and 4H-SiC well-oriented (0001) 35 mm diameter commercial wafers as well as on 6H-SiC...

    S. V. Rendakova, I. P. Nikitina, A. S. Tregubova… in Journal of Electronic Materials (1998)

  20. No Access

    Article

    GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

    6H-SiC/GaN pn-heterostructures were grown by subsequent epitaxial growth of p-SiC by low temperature liquid phase epitaxy (LTLPE) and n-GaN by hydride vapor phase epitaxy (HVPE). For the first time, p-type epi...

    A. E. Nikolaev, S. V. Rendakova, I. P. Nikitina… in Journal of Electronic Materials (1998)

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