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  1. No Access

    Article

    Obtaining Anisotypic Heterostructures for a GaSb-Based Photovoltaic Converter Due to Solid-Phase Substitution Reactions

    The possibility of manufacturing photovoltaic converter structures due to solid-phase reactions of substitution of Sb atoms in GaSb semiconductor wafers with As or P atoms, with simultaneous diffusion of Zn, i...

    G. S. Gagis, V. I. Kuchinskii, D. Yu. Kazantsev, B. Ya. Ber… in Technical Physics Letters (2023)

  2. No Access

    Article

    Obtaining of Nanoscale Layers of Solid Solutions in GaSb, GaAs, InAs Wafers Because of Solid-Phase Substitution Reactions

    Samples of heterostructures made on the basis of semiconductor wafers of binary compounds GaAs, GaSb and InAs as a result of substitution of Group V elements of atoms by atoms of other Group V elements supplie...

    V. I. Vasil’ev, G. S. Gagis, B. Ya. Ber… in Bulletin of the Russian Academy of Science… (2023)

  3. No Access

    Article

    Formation of the Near-Surface Layer of a Triple Solid Solution in Wafers of Binary Compounds of Groups III–V due to Solid-Phase Substitution Reactions

    The possibility of manufacturing semiconductor heterostructures based on III–V compounds for photovoltaic converters by diffusion methods is investigated. In a semiconductor wafer of the AB compound, a near-su...

    V. I. Vasil’ev, G. S. Gagis… in Journal of Surface Investigation: X-ray, S… (2022)

  4. No Access

    Article

    A Study of the Spatial-Emission Characteristics of Quantum-Cascade Lasers for the 8-μm Spectral Range

    Near- and far-fields of quantum-cascade lasers emitting in the spectral range near 8 μm have been studied. For all laser samples with a ridge width of 20 and 50 μm, lasing on the fundamental waveguide mode wit...

    V. V. Dudelev, D. A. Mikhailov, V. Yu. Myl’nikov… in Technical Physics Letters (2020)

  5. No Access

    Article

    Investigation of the Effect of Do** on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of MOCVD

    When studying doped anisotypic heterostructures with Ga1 – xInxAsyP1 – y layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is r...

    G. S. Gagis, V. I. Vasil’ev, R. V. Levin, A. E. Marichev… in Technical Physics Letters (2020)

  6. No Access

    Article

    Spectral Dynamics of Quantum Cascade Lasers Generating Frequency Combs in the Long-Wavelength Infrared Range

    We have studied the spectral and dynamic characteristics of quantum cascade lasers emitting in the long-wavelength infrared range. It is shown that lasers with a short cavity (~1 mm) make it possible to obtain...

    V. V. Dudelev, D. A. Mikhailov, A. V. Babichev, S. N. Losev… in Technical Physics (2020)

  7. No Access

    Article

    Generation of Droplet Quasi-Bessel Beams Using a Semiconductor Laser

    A method for generation of droplet quasi-Bessel beams using a conical lens with a rounded tip is demonstrated. The study of the longitudinal distribution of the intensity of the obtained quasi-Bessel beam show...

    D. V. Chistyakov, S. N. Losev, S. H. Abdulrazak… in Optics and Spectroscopy (2019)

  8. No Access

    Article

    Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy

    GaInPAs/InP heterostructures grown by metalorganic chemical vapor-phase deposition at a temperature of 600°C and pressure of 0.1 bar are investigated. The thicknesses of the grown GaInAsP layers amount to abou...

    G. S. Gagis, R. V. Levin, A. E. Marichev, B. V. Pushnyi, M. P. Scheglov… in Semiconductors (2019)

  9. No Access

    Article

    Generation of Frequency Combs by Quantum Cascade Lasers Emitting in the 8-μm Wavelength Range

    We have studied the generation of frequency combs by quantum cascade lasers (QCLs) emitting in the 8-μm wavelength range. Results showed the presence of a self-pulsation regime near the lasing threshold. Furth...

    V. V. Dudelev, D. A. Mikhailov, A. V. Babichev, S. N. Losev… in Technical Physics Letters (2019)

  10. No Access

    Article

    Luminescence Properties of GaInAsP Layers with Graded Composition–Depth Profiles Grown on InP Substrates

    Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The p...

    G. S. Gagis, A. S. Vlasov, R. V. Levin, A. E. Marichev… in Technical Physics Letters (2019)

  11. No Access

    Article

    The Effect of Active Region Heating on Dynamic and Power Characteristics of Quantum Cascade Lasers Emitting at a Wavelength of 4.8 µm at Room Temperature

    Results of studying stripe quantum cascade lasers emitting at room temperature in the spectral range of 4.8 µm are presented. Power characteristics and turn-on dynamics of the lasers upon pulse pum** are stu...

    V. V. Dudelev, V. V. Mamutin, D. V. Chistyakov… in Optics and Spectroscopy (2019)

  12. No Access

    Article

    A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy

    Gradual variation of the content y of Group-V components by Δy of up to 0.08 across the thickness (600–850 nm) of an epitaxial layer has been observed for Ga1 – xInxAsyP1 – y solid solutions (x = 0.86, y = 0.07–0...

    V. I. Vasil’ev, G. S. Gagis, R. V. Levin, A. E. Marichev… in Technical Physics Letters (2018)

  13. No Access

    Article

    High Temperature Laser Generation of Quantum-Cascade Lasers in the Spectral Region of 8 μm

    Abstract—In this paper, we present studies of the characteristics of quantum-cascade lasers with a generation wavelength in the region of 8 μm at high temperatures of up to + 65°C. The characteristic temperatures...

    V. V. Dudelev, S. N. Losev, V. Yu. Mylnikov, A. V. Babichev… in Physics of the Solid State (2018)

  14. No Access

    Article

    Turn-on Dynamics of Quantum Cascade Lasers with a Wavelength of 8100 nm at Room Temperature

    Lasing of quantum cascade lasers is demonstrated at a radiation wavelength of 8100 nm at room temperature. Analysis of oscillograms of optical pulses is used to determine dependence of mean and peak radiation ...

    V. V. Dudelev, S. N. Losev, V. Yu. Myl’nikov, A. V. Babichev… in Technical Physics (2018)

  15. No Access

    Article

    Generation of Droplet Bessel Beams Using a Semiconductor Laser

    In this paper, we studied Bessel beams obtained using an axicon with a substantially rounded apex. A study of the interference of two wave fronts arising from the refraction of the generating beam on an imperf...

    S. N. Losev, S. Kh. Abdulrazak, D. V. Chistyakov… in Technical Physics Letters (2018)

  16. No Access

    Article

    A Material for Difference-Frequency Generation of Terahertz Radiation

    The possibility of efficient difference-frequency generation of terahertz radiation in a metamaterial representing a structure consisting of alternating layers of a semiconductor materials exhibiting intrinsic...

    G. M. Savchenko, V. V. Dudelev, E. A. Kognovitskaya, S. N. Losev… in Optics and Spectroscopy (2018)

  17. No Access

    Article

    Dual-Frequency Generation in Quantum Cascade Lasers of the 8-μm Spectral Range

    Results of an investigation of quantum cascade lasers of the 8-μm spectral range generating dual-frequency radiation at room temperature are presented. The dependences of radiation intensity for two lines of l...

    V. V. Dudelev, S. N. Losev, V. Yu. Mylnikov, A. V. Babichev… in Optics and Spectroscopy (2018)

  18. No Access

    Article

    Generation of High-Power Ultrashort Optical Pulses Using a Semiconductor Laser with Controlled Current Pum**

    Fiber-coupled semiconductor lasers are studied under pum** with high-power short current pulses. Appropriate parameters of the current pum** make it possible to substantially reduce the output pulse durati...

    E. D. Kolykhalova, V. V. Dyudelev, S. V. Zazulin, S. N. Losev… in Technical Physics (2017)

  19. No Access

    Article

    Peaking of Optical Pulses in Vertical-Cavity Surface-Emitting Lasers with an Active Region Based on Submonolayer InGaAs Quantum Dots

    Vertical-cavity surface-emitting lasers with an active region based on submonolayer InGaAs quantum dots with an oxide-aperture diameter of ~1 μm have been studied. It is established that peaking of the output ...

    V. V. Dudelev, N. A. Maleev, A. G. Kuz’menkov, S. A. Blokhin… in Technical Physics Letters (2017)

  20. No Access

    Article

    A study of transition regions in InAsPSb/InAs heterostructures grown by MOVPE

    A study by secondary-ion mass spectrometry of InAs x P y Sb1–x–y/InAs heterostructures (x > 0.55) grown by vapor-phase epitaxy for lattice-misma...

    V. I. Vasil’ev, G. S. Gagis, R. V. Levin, V. I. Kuchinskii… in Technical Physics Letters (2017)

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