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  1. No Access

    Article

    Subminiature Light Sources Based on Semiconductor Nanostructures

    The paper states the operating principles of subminiature semiconductor emitters and offers the research results of the performance for those emitters that were developed and manufactured at the Rzhanov Instit...

    V. A. Gaisler, I. A. Derebezov in Optoelectronics, Instrumentation and Data … (2020)

  2. No Access

    Article

    Plasmon-Enhanced Vibrational Spectroscopy of Semiconductors Nanocrystals

    A review of recent results and new data on the study of the optical response from semiconductor nanocrystals obtained using plasmon-enhanced optical spectroscopy, including surface enhanced Raman scattering (S...

    A. G. Milekhin, T. A. Duda, E. E. Rodyakina in Optoelectronics, Instrumentation and Data … (2020)

  3. No Access

    Article

    From Self-Organization of Monoatomic Steps on the Silicon Surface to Subnanometer Metrology

    The article presents how the understanding of the fundamental processes of self-organization and morphological transformations of the atomically clean Si(111) surface as a result of the study using in situ ult...

    D. V. Sheglov, S. V. Sitnikov, L. I. Fedina in Optoelectronics, Instrumentation and Data … (2020)

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    Article

    Etching Kinetics of Si(111) Surface by Selenium Molecular Beam

    Using in situ ultrahigh vacuum reflection electron microscopy, three modes of the etching kinetics of the Si(111) surface with a selenium molecular beam are revealed. In the low temperature region ( ...

    S. A. Ponomarev, D. I. Rogilo, A. S. Petrov in Optoelectronics, Instrumentation and Data … (2020)

  5. No Access

    Article

    Molecular Beam Epitaxy of CdHgTe: Current State and Horizons

    We provide a review of the current state, problems and their solutions, and potential possibilities to develop the technology of the Molecular Beam epitaxy (MBE) to obtain CdHgTe structures on various substrat...

    V. S. Varavin, S. A. Dvoretskii in Optoelectronics, Instrumentation and Data … (2020)

  6. Article

    Open Access

    Dewetting behavior of Ge layers on SiO2 under annealing

    The solid-state dewetting phenomenon in Ge layers on SiO2 is investigated as a function of layer thickness dGe (from 10 to 86 nm) and annealing temperature. The dewetting is initiated at about 580–700 °C, dependi...

    A. A. Shklyaev, A. V. Latyshev in Scientific Reports (2020)

  7. No Access

    Article

    Osteogenic Potential of Decellularized Tooth Matrix

    We studied the possibility of using decellularized tooth matrix as a scaffold to restore bone tissue. It was found that mesenchymal stem cells underwent spontaneous osteogenic differentiation on the decellular...

    A. A. Ivanov, A. V. Latyshev, N. N. Butorina in Bulletin of Experimental Biology and Medic… (2020)

  8. No Access

    Article

    HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

    Matrix photosensitive elements based on a HgCdTe semiconductor solid solution on silicon substrates with 640 × 512 elements at a pitch of 25 μm with a long-wavelength sensitivity of 5 μm at half maximum are de...

    I. V. Marchishin, I. V. Sabinina in Journal of Communications Technology and E… (2020)

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    Article

    Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods

    Composites consisting of Ge nanoclusters embedded in GeO2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO2{Ge-NCs} hete...

    K. N. Astankova, E. B. Gorokhov, I. A. Azarov, V. A. Volodin in Semiconductors (2019)

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    Article

    A Megapixel Matrix Photodetector of the Middle Infrared Range

    Abstract—The characteristics of MWIRs focal plane aeeays made in the form of a hybrid chip based on a planar n+–p-HgCdTe focal matrix with 2048 × 2048 elements and a silicon multiplexer are considered. The temper...

    V. M. Bazovkin, V. S. Varavin in Journal of Communications Technology and E… (2019)

  11. No Access

    Article

    Modulation of Magneto-Intersubband Oscillations in a One-Dimensional Lateral Superlattice

    Low-temperature magnetotransport in a quasi-two-dimensional electron system based on a selectively doped GaAs quantum well with two occupied quantum-confinement subbands with one-dimensional periodic modulatio...

    A. A. Bykov, I. S. Strygin, A. V. Goran, D. V. Nomokonov, I. V. Marchishin in JETP Letters (2019)

  12. No Access

    Article

    Plasmon-Enhanced Near-Field Optical Spectroscopy of Multicomponent Semiconductor Nanostructures

    Multicomponent semiconductor nanostructures were studied by local spectral analysis based on surface-enhanced Raman scattering by semiconductor nanostructures located on the surface of an array of Au nanoclust...

    K. V. Anikin, A. G. Milekhin, M. Rahaman in Optoelectronics, Instrumentation and Data … (2019)

  13. No Access

    Article

    Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns

    Abstract—Design and fabrication of photosensitive array elements in the 384 × 288 element format with a step of 25 μm with a long wavelength limit of sensitivity at 0.5 to approximately 9.5 μm were performed. The...

    A. V. Zverev, A. O. Suslyakov in Journal of Communications Technology and E… (2019)

  14. No Access

    Article

    Silicon p-n-Diode Based Electro-Optic Modulators

    A method for forming p-n-diode based silicon electro-optic modulators using local oxidation is tested. It is shown that the local oxidation of silicon allows forming a rib waveguide as a smoothed trapezoid, in co...

    O. V. Naumova, B. I. Fomin, Yu. A. Zhivodkov in Optoelectronics, Instrumentation and Data … (2019)

  15. No Access

    Article

    Photon-Assisted Electron Transmission through a Quantum Point Contact

    The theory of coherent photon-assisted electron transmission through a one-dimensional smooth barrier is successfully used to model the results of measuring the terahertz photoconductivity of a tunneling point...

    O. A. Tkachenko, D. G. Baksheev in Optoelectronics, Instrumentation and Data … (2019)

  16. No Access

    Article

    Tectonics of Pleistocene Deposits in the Northeast of Taman Peninsula, South Azov Sea Region

    Studies in paleomagnetism, structural geology, and paleontology (mammals, mollusks, palynology) in the coastal sections of the Taman Peninsula north-western part (2017–18) resulted in definition of three sedim...

    A. S. Tesakov, O. V. Gaidalenok, S. A. Sokolov, P. D. Frolov in Geotectonics (2019)

  17. No Access

    Article

    The Late Vendian Basement within the Limits of the Blyb Metamorphic Complex, Peredovoi Range of the Greater Caucasus

    New data are presented concerning the age and relationships with the overlap** rocks of the Balkan massif of quartz diorites located in the central part of the Blyb metamorphic complex of the Peredovoi Range...

    V. A. Kamzolkin, M. L. Somin, A. V. Latyshev, Yu. P. Vidyapin in Doklady Earth Sciences (2019)

  18. No Access

    Article

    Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

    By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of...

    S. V. Sitnikov, E. E. Rodyakina, A. V. Latyshev in Semiconductors (2019)

  19. No Access

    Article

    Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

    The transformation of micropits on large terraces of the Si(111) surface containing no vicinal atomic steps has been investigated by in situ ultrahigh-vacuum reflection electron microscopy upon thermal anneali...

    A. S. Petrov, S. V. Sitnikov, S. S. Kosolobov, A. V. Latyshev in Semiconductors (2019)

  20. No Access

    Article

    Signs of the Record of Geomagnetic Reversal in Permian–Triassic Trap Intrusions of the Ergalakhsky Complex, Norilsk Region

    In the sections of two Permian–Triassic trap intrusions of the Ergalakhsky complex, Norilsk region, we revealed the alternation of the intervals of normal and reversed polarity. The near-contact zones of the i...

    A. V. Latyshev, P. S. Ulyakhina in Izvestiya, Physics of the Solid Earth (2019)

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