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Article
Spin-selective strong light–matter coupling in a 2D hole gas-microcavity system
The interplay between time-reversal symmetry breaking and strong light–matter coupling in two-dimensional (2D) gases brings intriguing aspects to polariton physics. This combination can lead to a polarization/...
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Article
Open AccessGate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition
Electric conductors with dimensions reduced to the nanometer scale are the prerequisite of the quantum devices upon which the future advanced electronics is expected to be based. In the past, the fabrication o...
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Article
Open AccessMarginal metallic state at a fractional filling of ’8/5’ and ’4/3’ of Landau levels in the GaAs/AlGaAs 2D electron system
A metallic state with a vanishing activation gap, at a filling factor \(\nu = 8/5\) ν ...
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Article
Strong photon coupling to the quadrupole moment of an electron in a solid-state qubit
The fundamental concept of light–matter interaction is routinely realized by coupling the quantized electric field in a cavity to the dipole moment of a real or an artificial atom. A recent proposal1,2, motivated...
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Article
Nagaoka ferromagnetism observed in a quantum dot plaquette
Engineered, highly controllable quantum systems are promising simulators of emergent physics beyond the simulation capabilities of classical computers1. An important problem in many-body physics is itinerant magn...
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Article
Open AccessStudy of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation
The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈107 cm2/Vs) is experimentally examined as a function of inc...
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Article
Influence of microwave photo-excitation on the transport properties of the high mobility GaAs/AlGaAs 2D electron system
We examined the influence of the microwave power on the diagonal resistance in the GaAs/AlGaAs two dimensional electron system (2DES), in order to extract the electron temperature and determine microwave induc...
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Article
Open AccessVirtual-photon-mediated spin-qubit–transmon coupling
Spin qubits and superconducting qubits are among the promising candidates for realizing a solid state quantum computer. For the implementation of a hybrid architecture which can profit from the advantages of e...
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Article
Open AccessAuger-spectroscopy in quantum Hall edge channels and the missing energy problem
Quantum Hall edge channels offer an efficient and controllable platform to study quantum transport in one dimension. Such channels are a prospective tool for the efficient transfer of quantum information at th...
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Article
Open AccessCoherent microwave-photon-mediated coupling between a semiconductor and a superconducting qubit
Semiconductor qubits rely on the control of charge and spin degrees of freedom of electrons or holes confined in quantum dots. They constitute a promising approach to quantum information processing, complement...
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Article
Open AccessLoading a quantum-dot based “Qubyte” register
Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a ...
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Article
Open AccessCyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands
The reflected microwave power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide frequency band spanning from 30 to 330 GHz simultaneously along with diagonal magnetores...
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Article
Electron Spin Resonance in an AlAs Quantum Well near Filling Factor 1
The phenomenon of spin resonance of two-dimensional electrons confined in a 16 nm AlAs quantum well is studied in the quantum Hall effect regime near filling factor 1. At a temperature of T = 0.5K, spin resonance...
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Article
Coherent spin–photon coupling using a resonant exchange qubit
Electron spins hold great promise for quantum computation because of their long coherence times. Long-distance coherent coupling of spins is a crucial step towards quantum information processing with spin qubi...
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Article
Open AccessSignatures of transient Wannier-Stark localization in bulk gallium arsenide
Many properties of solids result from the fact that in a periodic crystal structure, electronic wave functions are delocalized over many lattice sites. Electrons should become increasingly localized when a str...
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Article
Open AccessCoherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES
A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval −0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 107cm2/Vs ...
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Article
Open AccessB-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system
We report the observation of dc-current-bias-induced B-periodic Hall resistance oscillations and Hall plateaus in the GaAs/AlGaAs 2D system under combined microwave radiation- and dc bias excitation at liquid hel...
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Article
Quantum simulation of a Fermi–Hubbard model using a semiconductor quantum dot array
A quantum simulation platform based on quantum dots is reported that can operate at relatively low temperatures, and its utility is shown by simulating a Fermi–Hubbard model.
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Article
Open AccessMutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES
Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-cu...
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Article
Open AccessTunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system
Electron-heating induced by a tunable, supplementary dc-current (Idc) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown ...
