22 Result(s)
within
A. V. Shchepetilnikov
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Article
Efficiency of Sub-THz-to-DC Energy Conversion by Means of a Silicon Detector
The efficiency η of sub-THz-to-DC energy conversion of a silicon-based plasmonic detector was studied. The dependence of the detector output signal on the incident radiation power was measured. It was shown th...
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Article
Open AccessErratum to: Plasma Excitations in SiGe/Si Quantum Wells
An Erratum to this paper has been published: https://doi.org/10.1134/S0021364023380010
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Article
Open AccessErratum to: Low-Temperature Characteristics of a Silicon-Based Sub-THz Detector
An Erratum to this paper has been published: https://doi.org/10.3103/S1062873823330018
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Article
Open AccessPlasma Excitations in SiGe/Si Quantum Wells
Plasma and magnetoplasma excitations in high-quality undoped two-dimensional electron systems based on SiGe/Si quantum wells are studied in detail. A two-dimensional electron system is formed by applying a vo-...
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Article
Open AccessSpin–Orbit Interaction in ZnO/MgxZn1 – xO Heterojunctions Probed by Electron Spin Resonance Spectroscopy
The spin–orbit interaction in a series of ZnO/MgxZn1 – xO heterojunctions containing a two-dimensional electron system with a wurtzite structure has been studied in detail. The spin–orbit coupling constants have ...
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Article
Open AccessLow-Temperature Characteristics of a Silicon-Based Sub-THz Detector
Characteristics of a silicon-based sub-THz plasmonic detector are studied in a wide range of temperatures down to that of liquid nitrogen. The temperature dependences of the detector’s sensitivity are obtained...
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Article
Open AccessErratum to: Several Articles in JETP Letters
An Erratum to this paper has been published: https://doi.org/10.1134/S002136402235003X
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Article
Open AccessWeak Antilocalization Effect in an AlAs/AlGaAs Quantum Well
Weak antilocalization in a narrow AlAs quantum well containing a two-dimensional electron system with a large effective mass at low temperatures has been studied. Such quantum corrections are due to a strong s...
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Article
Contactless Observation of Microwave Induced Resistance Oscillations in ZnO/MgxZn1 – xO Heterojunction
In high-quality ZnO/MgxZn1 – xO heterojunctions, microwave-induced magnetoresistance oscillations have been investigated using a contactless technique. The basic detection principle relies on the measurements of ...
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Article
Electron Spin Resonance under Conditions of a Ferromagnetic Phase Transition
The spin resonance of two-dimensional conduction electrons in a ZnO/MgZnO heterojunction in tilted magnetic fields is studied near the filling factor ...
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Article
Observing Spin Resonance in Two-Dimensional Conductivity Electrons in Contactless Geometry
Two fundamentally different non-contact techniques are used to observe electronic paramagnetic resonance (EPR) in a two-dimensional system based on the ZnO/MgZnO heterotransition. Spin resonance is detected in...
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Article
New Ultra-Fast Sub-Terahertz Linear Scanner for Postal Security Screening
To meet increasingly demanding technological needs in modern security and industrial applications involving rapid close-range screening, we have developed a 100-GHz linear scanner. Having incorporated a novel ...
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Article
Comparative Study of the Two-Dimensional Plasma Excitations in the Heterostructures ZnO/MgZnO, AlAs/AlGaAs, and GaAs/AlGaAs
The plasma oscillations in new advanced two-dimensional electron systems (2DESs) based on the heterostructures ZnO/MgZnO, AlAs/AlGaAs, and GaAs/AlGaAs are studied and compared. The relaxation times and the eff...
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Article
Optimization of the frequency response of a novel GaAs plasmonic terahertz detector
Previously there was reported a new type of high-speed plasmonic THz detector that can operate at room temperature. As an extension of that work, the sensitivity of the detector was investigated over a wide ra...
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Article
Observation of Electron Spin Resonance in the Microwave-Induced Photovoltage
The microwave-induced photovoltage in two-dimensional electron systems in an AlAs quantum well and a ZnO/MgZnO heterojunction under the conditions of the quantum Hall effect is investigated. When the magnetic ...
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Article
Electron Spin Resonance in an AlAs Quantum Well near Filling Factor 1
The phenomenon of spin resonance of two-dimensional electrons confined in a 16 nm AlAs quantum well is studied in the quantum Hall effect regime near filling factor 1. At a temperature of T = 0.5K, spin resonance...
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Article
Renormalization of the Effective Electron Mass Governing the Period of Microwave-Induced Resistance Oscillations in ZnO/MgZnO Heterojunctions
The phenomenon of microwave-induced magnetoresistance oscillations is studied in a series of ZnO/MgZnO heterojunctions characterized by different two-dimensional electron densities n. It is found that the effecti...
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Article
Electron paramagnetic resonance study of the nuclear spin dynamics in an AlAs quantum well
The nuclear spin dynamics in an asymmetrically doped 16-nm AlAs quantum well grown along the [001] direction has been studied experimentally using the time decay of the Overhauser shift of paramagnetic resonan...
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Article
Observation of Microwave-Induced Magnetoresistance Oscillations in a ZnO/Mg x Zn1–x O Heterojunction
Microwave-induced magnetoresistance and magnetoconductance oscillations in the two-dimensional electron system have been detected in a ZnO/Mg x Zn1–x ...
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Article
Interface contributions to the spin-orbit interaction parameters of electrons at the (001) GaAs/AlGaAs interface
One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/Al x Ga1 − x As quantum well have been studied theoret...
