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Article
Open AccessMarginal metallic state at a fractional filling of ’8/5’ and ’4/3’ of Landau levels in the GaAs/AlGaAs 2D electron system
A metallic state with a vanishing activation gap, at a filling factor \(\nu = 8/5\) ν ...
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Article
Open AccessStudy of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation
The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈107 cm2/Vs) is experimentally examined as a function of inc...
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Article
Influence of microwave photo-excitation on the transport properties of the high mobility GaAs/AlGaAs 2D electron system
We examined the influence of the microwave power on the diagonal resistance in the GaAs/AlGaAs two dimensional electron system (2DES), in order to extract the electron temperature and determine microwave induc...
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Article
The role of surface morphology on nucleation density limitation during the CVD growth of graphene and the factors influencing graphene wrinkle formation
CVD graphene growth typically uses commercially available cold-rolled copper foils, which includes a rich topography with scratches, dents, pits, and peaks. The graphene grown on this topography, even after an...
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Article
Open AccessRadiation-induced magnetoresistance oscillations in monolayer and bilayer graphene
We examine the characteristics of the microwave/mm-wave/terahertz radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene and report that the oscillation frequency of the radiation-i...
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Article
Open AccessCyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands
The reflected microwave power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide frequency band spanning from 30 to 330 GHz simultaneously along with diagonal magnetores...
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Article
Open AccessCoherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES
A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval −0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 107cm2/Vs ...
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Article
Open AccessB-periodic oscillations in the Hall-resistance induced by a dc-current-bias under combined microwave-excitation and dc-current bias in the GaAs/AlGaAs 2D system
We report the observation of dc-current-bias-induced B-periodic Hall resistance oscillations and Hall plateaus in the GaAs/AlGaAs 2D system under combined microwave radiation- and dc bias excitation at liquid hel...
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Article
Open AccessMutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES
Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-cu...
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Article
Open AccessTunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system
Electron-heating induced by a tunable, supplementary dc-current (Idc) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown ...
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Article
Open AccessMagneto-transport characteristics of a 2D electron system driven to negative magneto-conductivity by microwave photoexcitation
Negative diagonal magneto-conductivity/resistivity is a spectacular- and thought provoking-property of driven, far-from-equilibrium, low dimensional electronic systems. The physical response of this exotic ele...
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Article
Linear Polarization Rotation Study of the Microwave-Induced Magnetoresistance Oscillations in the GaAs/AlGaAs System
Microwave-induced zero-resistance states appear when the associated B-1-periodic magnetoresistance oscillations grow in amplitude and become comparable to the dark resistance of the two-dimensional electron syste...
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Article
Microwave Reflection From The Microwave Photo-Excited High Mobility GaAs/AlGaAs Two-Dimensional Electron System
We examine the microwave reflection from the high mobility GaAs/AlGaAs two-dimensional electron system (2DES). Strong correlations have been observed between the microwave induced magnetoresistance oscillation...
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Article
Open AccessSize-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices
Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insi...
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Article
Electrical Study of Device Arrays on Thin Film Vanadium Dioxide
The VO2 phase of vanadium oxide is known to exhibit large changes in the electrical and optical properties in the vicinity of the structural phase transition at 68C. Here, we report on the fabrication and study o...
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Chapter
Novel Non-equilibrium Zero-resistance States in the High Mobility GaAs/AlGaAs System
We illustrate various experimental features of the recently discovered radiation-induced zero-resistance states in the high mobility GaAs/AlGaAs system, with a special emphasis on the interplay between the ra...
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Article
Fractional quantum Hall effects as an example of fractal geometry in nature
A prescription is provided for constructing the Hall curve including both integral (I)- and fractional (F)-quantum Hall effects (QHE) that is based upon the iterative application of particular transformations ...
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Article
Realization of dual, tunable, ordinary- and quantized-Hall resistances in doubly connected GaAs/AlGaAs heterostructures
An experimental configuration based on gated, double boundary GaAs/AlGaAs devices provides the first demonstration of dual distinct, tunable Hall resistances in the same sample over the weak- and strongmagneti...
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Chapter and Conference Paper
Influence of Localization on the Hall Effect in Narrow-Gap, Bulk Semiconductors
Our transport study of the narrow gap, bulk (3D) semiconductors Hg1−xCdxTe and InSb reveals incipient, non-quantized “Hall plateaus” which coincide with the minima of Shubnikov-de Haas oscillations, analogous to ...
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Chapter and Conference Paper
Conductance Fluctuations on the Quantum Hall Plateaus in GaAs/AlGaAs
The gauge invariance arguments of Laughlin imply perfect quantization of the quantum Hall plateaus /1/ and Hall voltage measurements using digital time-averaging, null detection techniques at fixed values of t...
