-
Article
Open AccessStudy of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation
The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈107 cm2/Vs) is experimentally examined as a function of inc...
-
Article
Influence of microwave photo-excitation on the transport properties of the high mobility GaAs/AlGaAs 2D electron system
We examined the influence of the microwave power on the diagonal resistance in the GaAs/AlGaAs two dimensional electron system (2DES), in order to extract the electron temperature and determine microwave induc...
-
Article
Open AccessRadiation-induced magnetoresistance oscillations in monolayer and bilayer graphene
We examine the characteristics of the microwave/mm-wave/terahertz radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene and report that the oscillation frequency of the radiation-i...
-
Article
Open AccessCyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave, mm-wave, and terahertz- bands
The reflected microwave power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide frequency band spanning from 30 to 330 GHz simultaneously along with diagonal magnetores...
-
Article
Open AccessCoherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES
A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval −0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 107cm2/Vs ...
-
Article
Open AccessMagneto-transport characteristics of a 2D electron system driven to negative magneto-conductivity by microwave photoexcitation
Negative diagonal magneto-conductivity/resistivity is a spectacular- and thought provoking-property of driven, far-from-equilibrium, low dimensional electronic systems. The physical response of this exotic ele...
-
Article
Open AccessSize-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices
Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insi...
