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  1. Article

    Open Access

    Marginal metallic state at a fractional filling of ’8/5’ and ’4/3’ of Landau levels in the GaAs/AlGaAs 2D electron system

    A metallic state with a vanishing activation gap, at a filling factor \(\nu = 8/5\) ν ...

    R. G. Mani, U. K. Wijewardena, T. R. Nanayakkara, Annika Kriisa… in Scientific Reports (2021)

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  2. Article

    Open Access

    Study of narrow negative magnetoresistance effect in ultra-high mobility GaAs/AlGaAs 2DES under microwave photo-excitation

    The microwave-induced change in the narrow negative magnetoresistance effect that appears around zero magnetic field in high mobility GaAs/AlGaAs 2DES (≈107 cm2/Vs) is experimentally examined as a function of inc...

    R. L. Samaraweera, B. Gunawardana, T. R. Nanayakkara… in Scientific Reports (2020)

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  3. No Access

    Article

    Influence of microwave photo-excitation on the transport properties of the high mobility GaAs/AlGaAs 2D electron system

    We examined the influence of the microwave power on the diagonal resistance in the GaAs/AlGaAs two dimensional electron system (2DES), in order to extract the electron temperature and determine microwave induc...

    T. R. Nanayakkara, R. L. Samaraweera, A. Kriisa, U. Kushan Wijewardena… in MRS Advances (2019)