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Influence of microwave photo-excitation on the transport properties of the high mobility GaAs/AlGaAs 2D electron system

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Abstract

We examined the influence of the microwave power on the diagonal resistance in the GaAs/AlGaAs two dimensional electron system (2DES), in order to extract the electron temperature and determine microwave induced heating as a function of the microwave power. The study shows that microwaves produce a small discernable increase in the electron temperature both at null magnetic field and at finite magnetic fields in the GaAs/AlGaAs 2DES. The heating effect at null field appears greater in comparison to the examined finite field interval, although the increase in the electron temperature in the zero-field limit appears smaller than theoretical predictions.

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Authors and Affiliations

  1. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia, 30303, USA

    T. R. Nanayakkara, R. L. Samaraweera, A. Kriisa, U. Kushan Wijewardena, S. Withanage & R. G. Mani

  2. Laboratorium für Festkörperphysik, ETH Zürich, CH-8093, Zürich, Switzerland

    C. Reichl & W. Wegscheider

Authors
  1. T. R. Nanayakkara
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  2. R. L. Samaraweera
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  3. A. Kriisa
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  4. U. Kushan Wijewardena
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  5. S. Withanage
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  6. C. Reichl
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  8. R. G. Mani
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Correspondence to R. G. Mani.

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Nanayakkara, T.R., Samaraweera, R.L., Kriisa, A. et al. Influence of microwave photo-excitation on the transport properties of the high mobility GaAs/AlGaAs 2D electron system. MRS Advances 4, 3347–3352 (2019). https://doi.org/10.1557/adv.2020.30

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  • DOI: https://doi.org/10.1557/adv.2020.30

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