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Article
Contactless Observation of Microwave Induced Resistance Oscillations in ZnO/MgxZn1 – xO Heterojunction
In high-quality ZnO/MgxZn1 – xO heterojunctions, microwave-induced magnetoresistance oscillations have been investigated using a contactless technique. The basic detection principle relies on the measurements of ...
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Article
Electron Spin Resonance under Conditions of a Ferromagnetic Phase Transition
The spin resonance of two-dimensional conduction electrons in a ZnO/MgZnO heterojunction in tilted magnetic fields is studied near the filling factor ...
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Article
Observing Spin Resonance in Two-Dimensional Conductivity Electrons in Contactless Geometry
Two fundamentally different non-contact techniques are used to observe electronic paramagnetic resonance (EPR) in a two-dimensional system based on the ZnO/MgZnO heterotransition. Spin resonance is detected in...
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Article
New Ultra-Fast Sub-Terahertz Linear Scanner for Postal Security Screening
To meet increasingly demanding technological needs in modern security and industrial applications involving rapid close-range screening, we have developed a 100-GHz linear scanner. Having incorporated a novel ...
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Article
Comparative Study of the Two-Dimensional Plasma Excitations in the Heterostructures ZnO/MgZnO, AlAs/AlGaAs, and GaAs/AlGaAs
The plasma oscillations in new advanced two-dimensional electron systems (2DESs) based on the heterostructures ZnO/MgZnO, AlAs/AlGaAs, and GaAs/AlGaAs are studied and compared. The relaxation times and the eff...
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Article
Optimization of the frequency response of a novel GaAs plasmonic terahertz detector
Previously there was reported a new type of high-speed plasmonic THz detector that can operate at room temperature. As an extension of that work, the sensitivity of the detector was investigated over a wide ra...
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Article
Observation of Electron Spin Resonance in the Microwave-Induced Photovoltage
The microwave-induced photovoltage in two-dimensional electron systems in an AlAs quantum well and a ZnO/MgZnO heterojunction under the conditions of the quantum Hall effect is investigated. When the magnetic ...
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Article
Electron Spin Resonance in an AlAs Quantum Well near Filling Factor 1
The phenomenon of spin resonance of two-dimensional electrons confined in a 16 nm AlAs quantum well is studied in the quantum Hall effect regime near filling factor 1. At a temperature of T = 0.5K, spin resonance...
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Article
Renormalization of the Effective Electron Mass Governing the Period of Microwave-Induced Resistance Oscillations in ZnO/MgZnO Heterojunctions
The phenomenon of microwave-induced magnetoresistance oscillations is studied in a series of ZnO/MgZnO heterojunctions characterized by different two-dimensional electron densities n. It is found that the effecti...
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Article
Electron paramagnetic resonance study of the nuclear spin dynamics in an AlAs quantum well
The nuclear spin dynamics in an asymmetrically doped 16-nm AlAs quantum well grown along the [001] direction has been studied experimentally using the time decay of the Overhauser shift of paramagnetic resonan...
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Article
Observation of Microwave-Induced Magnetoresistance Oscillations in a ZnO/Mg x Zn1–x O Heterojunction
Microwave-induced magnetoresistance and magnetoconductance oscillations in the two-dimensional electron system have been detected in a ZnO/Mg x Zn1–x ...
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Article
Interface contributions to the spin-orbit interaction parameters of electrons at the (001) GaAs/AlGaAs interface
One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/Al x Ga1 − x As quantum well have been studied theoret...
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Article
Spin relaxation in GaAs/AlGaAs quantum wells in the vicinity of odd filling factors
Electron spin resonance in GaAs/AlGaAs quantum wells in the vicinity of odd filling factors ν = 3, 5, and 7 is investigated. The spin relaxation time of two-dimensional electrons is determined from the width o...
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Article
Spin relaxation of two-dimensional electrons in a hall ferromagnet
Electron spin resonance in a system of two-dimensional electrons with a high electron mobility has been investigated and the position, width, intensity, and line shape of the resonance microwave absorption hav...
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Article
Measurement of cyclotron masses of spin-orbit-split quasi-two-dimensional holes in GaAs(100) narrow quantum wells
The magnetic field dependence of the cyclotron mass of heavy holes in asymmetric GaAs(100) quantum wells is measured by optical detection of resonant microwave absorption for various concentrations of quasi-tw...
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Article
Microwave Surface Impedance and Complex Conductivity of High-T c Single Crystals: Current State and Unsolved Problems
Common and distinctive features of the temperature dependences of microwave surface impedance Z(T)=R(T)+iX(T) and conductivity σ(T) in the ab-plane and along the c-axis of high-T c single crystals...
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Article
Triple Approach to Determination of the c-Axis Penetration Depth in BSCCO Crystals
The c-axis penetration depth λc in Bi2Sr2CaCu2O8+δ (BSCCO) single crystals as a function of temperature has been determined using three high-frequency techniques, namely (1) measurements of the ac-susceptibility ...
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Article
Phenomenological description of the microwave surface impedance and complex conductivity of high-T c single crystals
Measurements of the microwave surface impedance Z s (T) = R s (T) + iX s (T) and the complex conductivity σ
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Article
c-axis penetration depth in Bi2Sr2CaCu2O8+δ single crystals measured by ac-susceptibility and cavity perturbation technique
The c-axis penetration depth Δλc in Bi2Sr2CaCu2O8+δ (BSCCO) single crystals as a function of temperature has been determined using two techniques, namely, measurements of the ac-susceptibility at a frequency of 1...
