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  1. No Access

    Article

    Microcrystalline Silicon Tunnel Junctions for Amorphous Silicon-Based Multijunction Solar Cells

    The formation of tunnel junctions for applications in amorphous silicon (a-Si:H) based multijunction n-i-p solar cells has been studied using real time optics. The junction structure investigated in detail her...

    A. S. Ferlauto, Joohyun Koh, P. I. Rovira, C. R. Wronski… in MRS Online Proceedings Library (1999)

  2. No Access

    Article

    Kinetics of Light-Induced Changes in P-I-N Cells with Protocrystalline Si:H

    Studies have been carried out on the thickness dependent transition between the amorphous and microcrystalline phases in intrinsic Si:H materials (i-layers) and its effect on p-i-n solar cell performance [1]. ...

    R. J. Koval, J. Koh, Z. Lu, Y. Lee, L. Jiao… in MRS Online Proceedings Library (1999)

  3. No Access

    Article

    Real Time Characterization of Non-Ideal Surfaces and Thin Film Growth by Advanced Ellipsometric Spectroscopies

    The development of multichannel ellipsometers with photodiode array-based detection systems has enabled real time spectroscopic ellipsometry (SE), a technique now being used widely to study surface modificatio...

    R. W. Collins, P. I. Rovira, A. S. Ferlauto, Joohyun Koh… in MRS Online Proceedings Library (1999)

  4. No Access

    Article

    Real Time Spectroscopic Ellipsometry Studies of the Solid Phase Crystallization of Amorphous Silicon

    We have introduced real time spectroscopic ellipsometry (RTSE) for characterization of the solid phase crystallization (SPC) of intrinsic and n-type amorphous silicon (a-Si:H) thin films. RTSE has several adva...

    H. Fujiwara, Joohyun Koh, Yeeheng Lee, C. R. Wronski… in MRS Online Proceedings Library (1998)

  5. No Access

    Article

    Amorphous/Microcrystalline Phase Control in Silicon Film Deposition for Improved Solar Cell Performance

    Real time optical studies have provided insights into the growth of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) thin films by plasma-enhanced chemical vapor deposition as a f...

    Joohyun Koh, H. Fujiwara, Yeeheng Lee, C. R. Wronski… in MRS Online Proceedings Library (1998)

  6. No Access

    Article

    Nucleation of p-Type Microcrystalline Silicon on Amorphous Silicon for n-i-p Solar Cells Using B(CH3)3 And BF3 Dopant Source Gases

    Real time spectroscopic ellipsometry (RTSE) has been applied to identify optimal conditions for the nucleation and growth of 120 Å microcrystalline silicon (μc-Si:H) p-layers by rf plasma-enhanced chemical vap...

    Joohyun Koh, H. Fujiwara, R. J. Koval, C. R. Wronski… in MRS Online Proceedings Library (1998)

  7. No Access

    Article

    Characterization of Monolayer-Level Composition and Optical Gap Profiles in Amorphous Silicon-Carbon Alloy Bandgap-Modulated Structures

    Over the past few years we have applied real time spectroscopie ellipsometry (RTSE) to characterize the structural, compositional, and optical gap profiles in continuously-graded amorphous silicon-carbon alloy...

    H. Fujiwara, Joohyun Koh, C. R. Wronski, R. W. Collins in MRS Online Proceedings Library (1997)

  8. No Access

    Article

    Impact of Hydrogen Dilution on the Properties and Light Induced Changes of A-SI:H Based Materials and Solar Cells

    Studies have been carried out on a-Si:H materials and corresponding solar cells fabricated with and without hydrogen dilution of silane by rf PECVD. The effect of hydrogen dilution on the growth kinetics and m...

    Yeeheng Lee, Lihong Jiao, Joohyun Koh, Hiroyuki Fujiwara… in MRS Online Proceedings Library (1997)

  9. No Access

    Article

    Selfconsistent Analysis of Mobility-Lifetime Products and Subgap Absorption on Different PECVD A-SI:H Films

    The photoconductivity and subband gap absorption measurements over a wide range of generation rate(G) have been carried out ondiluted and undiluted a-Si:H films. It is found that in these high quality films th...

    Lihong Jiao, S. Semoushikina, Yeeheng Lee, C. R. Wronski in MRS Online Proceedings Library (1997)

  10. No Access

    Article

    Structural and Optical Properties of a-Si:H/μc-Si:H:B Junctions in the a-Si:H-Based n-i-P Solar Cell Configuration

    We have extended previous real time spectroscopie ellipsometry (RTSE) capabilities in order to investigate the effects of H2-plasma treatment of i-type hydrogenated amorphous silicon (a-Si:H) on the deposition of...

    Joohyun Kohi, H. Fujiwara, C. R. Wronski, R. W. Collins in MRS Online Proceedings Library (1997)

  11. No Access

    Article

    The Light Induced Changes in A-Si: H Materials and Solar Cells-Where We are Now

    The quest for understanding and especially controlling the reversible light induced changes in a-Si:H based materials has been ongoing for the last twenty years. This has been accompanied by a corresponding la...

    C. R. Wronski in MRS Online Proceedings Library (1997)

  12. No Access

    Article

    Nucleation and Growth of μc-Si:H n- and p-Type Layers in a-Si:H p-i-n and n-i-p Solar Cells: Real Time Spectroellipsometry Studies

    We have applied real time spectroellipsometry (RTSE) to study the growth of microcrystalline silicon n- and p-layers [μc-Si:H:(P,B)] incorporated into amorphous silicon (a-Si:H) p-i-n and n-i-p solar cells, re...

    Joohyun Koh, H. Fujiwara, C. R. Wronski, R. W. Collins in MRS Online Proceedings Library (1996)

  13. No Access

    Article

    Advances in the Characterization of Compositionally-Graded Layers in Amorphous Semiconductor Solar Cells by Real Time Spectroellipsometry

    We have developed a real time spectroellipsometry data analysis procedure that allows us to characterize compositionally-graded amorphous semiconductor alloy thin films prepared by plasma-enhanced chemical vap...

    R. W. Collins, Sangbo Kim, Joohyun Koh, J. S. Burnham… in MRS Online Proceedings Library (1996)

  14. No Access

    Article

    Real Time Monitoring of Amorphous Silicon Solar Cell Fabrication

    We have applied real time spectroscopie ellipsometry (RTSE) to monitor the successive growth of p-type a-Si1-xCx:H and i-type a-Si:H on specular SnO2:F (i.e., the superstrate solar cell configuration) in a single...

    Yiwei Lu, Sangbo Kim, J. S. Burnham, Ing-Shin Chen… in MRS Online Proceedings Library (1995)

  15. No Access

    Article

    Effect of White and Red Light Illumination on the Degradation of a-Si:H Solar Cells

    Structures were carried out on the degradation of heterojunction and homojunction a-Si:H solar cells, using Xenon arc and tungsten halogen light sources. The degradations were carried out with both white and r...

    Taraneh Jamali-Beh, I.-S Chen, H. Liu, Y. Lee… in MRS Online Proceedings Library (1995)

  16. No Access

    Article

    Analysis of Non-Uniform Creation of Light-Induced Defects in Schottky Barrier Solar Cell Structures

    Hydrogenated amorphous silicon (a-Si:H) TCO/n+/i/Ni Schottky barrier solar cells were degraded with illuminations of white and red light through both sides of the structure. Because the forward dark I-V’s are sen...

    Hongyue Liu, C. T. Malone, C. M. Fortmaiiii… in MRS Online Proceedings Library (1995)

  17. No Access

    Article

    The Staebler-Wronski Effect and the Thermal Equilibration of Defect and Carrier Concentrations

    Light induced degradation of intrinsic Amorphous silicon (a-Si:H) is investigated as a function of temperature. Previous work described an equilibrium framework for the high temperature behavior of dangling bo...

    R. M. A. Dawson, C. M. Fortmann, Y. M. Li, C. R. Wronski in MRS Online Proceedings Library (1994)

  18. No Access

    Article

    Charged Defect State Distributions Obtained from the Analysis of Photoconductivities in Intrinsic a-Si:H Films

    Steady-state photoconductivity, sub-bandgap absorption and electron spin resonance (ESR) Measurements were carried out on annealed and light soaked intrinsic hydrogenated Amorphous silicon (a-Si:H) films. The ...

    Mehmet Güneş, R. W. Collins, C. R. Wronski in MRS Online Proceedings Library (1994)

  19. No Access

    Article

    Process-Property Relationships For a-Si1-xCx:H Deposition: Excursions in Parameter Space Guided by Real Time Spectroellipsometry

    Real time spectroellipsometry (RTSE) has been applied to study the growth of a-Si1-xCx:H alloys (x~0.1; Eg=1.90-2.00 eV) for applications as i- and p-type layers in wide band gap solar cells. Two important materi...

    Yiwei Lu, Sangbo Kim, Mehmet Gunes, Yeeheng Lee… in MRS Online Proceedings Library (1994)

  20. No Access

    Article

    Effect of Gas Phase Hydrogen-Dilution on the Nucleation, Growth, and Interfaces of a-Si1-xCx:H

    The microstructural evolution of a-Si1−xCx:H with an optical gap of 1.95 eV, prepared by plasma-enhanced chemical vapor deposition (PECVD), has been studied versus gas phase H2-dilution by real time spectroscopic...

    Yiwei Lu, Ilsin An, M. Gunes, M. Wakagi, C.R. Wronski… in MRS Online Proceedings Library (1993)

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