-
Article
Preparation of Piezoelectric PZT Thin Films by Mocvd for MEMS Applications
Integration of piezoelectric Pb(Zr,Ti)O3 (PZT) thin films promises to provide silicon-based microelectromechanical systems (MEMS) with added functionality. PZT films with compositions near the tetragonal/rhombohe...
-
Article
Low Temperature MOCVD of Thin Film PZT
Incorporation of ferroelectric thin films into integrated microelectronics requires deposition temperatures compatible with back-end processing. Pb(Zr, Ti)O3 (PZT) thin films have been deposited at low temperatur...
-
Article
Advances in the Characterization of Compositionally-Graded Layers in Amorphous Semiconductor Solar Cells by Real Time Spectroellipsometry
We have developed a real time spectroellipsometry data analysis procedure that allows us to characterize compositionally-graded amorphous semiconductor alloy thin films prepared by plasma-enhanced chemical vap...
-
Article
Structural Evolution of Top-Junction a-Si:C:H:B and Mixed-Phase (Microcrystalline Si)-(a-Sil-xCx:H) p-Layers in a-Si:H n-i-p Solar Cells
We have applied real time spectroellipsometry (RTSE) to study hydrogenated amorphous silicon (a-Si:H) solar cells fabricated in the Cr/n-i-p configuration using plasma-enhanced chemical vapor deposition (PECVD...
-
Article
Real Time Monitoring of Amorphous Silicon Solar Cell Fabrication
We have applied real time spectroscopie ellipsometry (RTSE) to monitor the successive growth of p-type a-Si1-xCx:H and i-type a-Si:H on specular SnO2:F (i.e., the superstrate solar cell configuration) in a single...