Abstract
Real time spectroellipsometry (RTSE) has been applied to study the growth of a-Si1-xCx:H alloys (x~0.1; Eg=1.90-2.00 eV) for applications as i- and p-type layers in wide band gap solar cells. Two important material parameters, the optical gap and the relative bond-packing density (or void volume fraction), can be estimated from RTSE data collected during the growth of a sequence of layers onto the same substrate using different plasma-enhanced CVD conditions. In this way, large regions of parameter space have been scanned expeditiously, and an improved understanding of the effects of H2-dilution, substrate temperature (Ts), plasma power, gas pressure, and gas flow on the film properties has been obtained.
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Lu, Y., Kim, S., Gunes, M. et al. Process-Property Relationships For a-Si1-xCx:H Deposition: Excursions in Parameter Space Guided by Real Time Spectroellipsometry. MRS Online Proceedings Library 336, 595–600 (1994). https://doi.org/10.1557/PROC-336-595
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DOI: https://doi.org/10.1557/PROC-336-595