Abstract
We have developed a real time spectroellipsometry data analysis procedure that allows us to characterize compositionally-graded amorphous semiconductor alloy thin films prepared by plasma-enhanced chemical vapor deposition (PECVD). As an example, we have applied the analysis to obtain the depth-profile of the optical gap and alloy composition with ≤15 Å resolution for a hydrogenated amorphous silicon-carbon alloy (a-Si1-xCx:H) film prepared by continuously varying the gas flow ratio z=[CH4]/{[CH4]+[SiH4]} in the PECVD process. The graded layer has been incorporated at the p/i interface of widegap a-Si1-xCx:H (x~0.05) p-i-n solar cells, and consistent improvements in open-circuit voltage have been demonstrated. The importance of the graded-layer characterization is the ability to relate improvements in device performance directly to the physical properties of the interface layer, rather to the deposition parameters with which they were prepared.
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Acknowledgments
Support for this research was provided by NREL under Subcontract No. XAN-4-13318-03, NSF under Grant No. DMR-9217169, and by NEDO (Japan).
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Collins, R.W., Kim, S., Koh, J. et al. Advances in the Characterization of Compositionally-Graded Layers in Amorphous Semiconductor Solar Cells by Real Time Spectroellipsometry. MRS Online Proceedings Library 420, 443–448 (1996). https://doi.org/10.1557/PROC-420-443
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DOI: https://doi.org/10.1557/PROC-420-443