![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Preparation and Optical Properties of Ultrathin Silicon Films
Ultrathin crystalline silicon (c-Si) and amorphous silicon (a-Si:H) films have been prepared using plasma-enhanced chemical vapor deposition (PECVD) and atomic hydrogen etching methods. The complex dielectric ...
-
Article
Study on Hydrophobic a-C:H:F Overcoat Layer for a-Si:H Photoreceptor
To solve an image degradation problem of blurring for a-Si:H photoreceptors during the repetitions of electrophotographic process, effect of a-C:H:F overcoat layer has been investigated. The film is deposited ...
-
Article
Effect of Gas Phase Hydrogen-Dilution on the Nucleation, Growth, and Interfaces of a-Si1-xCx:H
The microstructural evolution of a-Si1−xCx:H with an optical gap of 1.95 eV, prepared by plasma-enhanced chemical vapor deposition (PECVD), has been studied versus gas phase H2-dilution by real time spectroscopic...
-
Article
Reduction of Internal Stress of a-Si:H Films by in Situ Measurements of Optical Emission Intensity from SiH4 Plasma
A parameter which determine internal stress of hydrogenated amorphous silicon (a-Si:H) prepared by plasma CVD method has been investigated to prevent a peeling off or crack forming problem. It is clarified tha...