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    Article

    Preparation and Optical Properties of Ultrathin Silicon Films

    Ultrathin crystalline silicon (c-Si) and amorphous silicon (a-Si:H) films have been prepared using plasma-enhanced chemical vapor deposition (PECVD) and atomic hydrogen etching methods. The complex dielectric ...

    R. W. Collins, Hien V. Nguyen, Ilsin An, Yiwei Lu in MRS Online Proceedings Library (2011)

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    Study on Hydrophobic a-C:H:F Overcoat Layer for a-Si:H Photoreceptor

    To solve an image degradation problem of blurring for a-Si:H photoreceptors during the repetitions of electrophotographic process, effect of a-C:H:F overcoat layer has been investigated. The film is deposited ...

    Fuhinori Ishikawa, K. Tamahashi, M. Chigasaki, S. Onuma in MRS Online Proceedings Library (2011)

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    Article

    Effect of Gas Phase Hydrogen-Dilution on the Nucleation, Growth, and Interfaces of a-Si1-xCx:H

    The microstructural evolution of a-Si1−xCx:H with an optical gap of 1.95 eV, prepared by plasma-enhanced chemical vapor deposition (PECVD), has been studied versus gas phase H2-dilution by real time spectroscopic...

    Yiwei Lu, Ilsin An, M. Gunes, M. Wakagi, C.R. Wronski in MRS Online Proceedings Library (1993)

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    Article

    Reduction of Internal Stress of a-Si:H Films by in Situ Measurements of Optical Emission Intensity from SiH4 Plasma

    A parameter which determine internal stress of hydrogenated amorphous silicon (a-Si:H) prepared by plasma CVD method has been investigated to prevent a peeling off or crack forming problem. It is clarified tha...

    K. Tamahashi, M. Wakagi, F. Ishikawa, T. Kaneko in MRS Online Proceedings Library (1990)