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Article
Advances in the Characterization of Compositionally-Graded Layers in Amorphous Semiconductor Solar Cells by Real Time Spectroellipsometry
We have developed a real time spectroellipsometry data analysis procedure that allows us to characterize compositionally-graded amorphous semiconductor alloy thin films prepared by plasma-enhanced chemical vap...
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Article
Structural Evolution of Top-Junction a-Si:C:H:B and Mixed-Phase (Microcrystalline Si)-(a-Sil-xCx:H) p-Layers in a-Si:H n-i-p Solar Cells
We have applied real time spectroellipsometry (RTSE) to study hydrogenated amorphous silicon (a-Si:H) solar cells fabricated in the Cr/n-i-p configuration using plasma-enhanced chemical vapor deposition (PECVD...
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Article
Real Time Monitoring of Amorphous Silicon Solar Cell Fabrication
We have applied real time spectroscopie ellipsometry (RTSE) to monitor the successive growth of p-type a-Si1-xCx:H and i-type a-Si:H on specular SnO2:F (i.e., the superstrate solar cell configuration) in a single...
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Article
Spectroellipsometry Studies of Zn1−xCdxSe: From Optical Functions to Heterostructure Characterization
The dielectric functions of 0.5-1.5 µm Zn1−xCdxSe (0≤x≤0.34) epilayers on GaAs have been determined over the photon energy range 1.5≤E≤5.3 eV. These spectra have been parameterized using the Sellmeier approximati...