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Article
Open AccessMagnetotransport signatures of antiferromagnetism coexisting with charge order in the trilayer cuprate HgBa2Ca2Cu3O8+δ
Multilayered cuprates possess not only the highest superconducting temperature transition but also offer a unique platform to study disorder-free CuO2 planes and the interplay between competing orders with superc...
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Article
Open AccessEdge-emitting polariton laser and amplifier based on a ZnO waveguide
We demonstrate edge-emitting exciton-polariton (polariton) laser operation from 5 to 300 K and polariton amplifiers based on polariton modes within ZnO waveguides. The guided mode dispersion below and above th...
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Article
Open AccessAuthor Correction: Glassy Dynamics in a heavy ion irradiated NbSe2 crystal
A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper.
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Article
Open AccessGlassy Dynamics in a heavy ion irradiated NbSe2 crystal
Fascination with glassy states has persisted since Fisher introduced the vortex-glass as a new thermodynamic phase that is a true superconductor that lacks conventional long-range order. Though Fisher’s origin...
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Article
Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
We report on photoluminescence and photoluminescence excitation experiments performed on hexagonal GaN layers grown on a Sapphire substrate. Information about extrinsic and intrinsic optical properties have be...
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Article
p-do** of GaN by MOVPE
Mg has been widely used as p-do** species despite its intrinsic difficulties. It is nowadays well established that during the growth process of Mg doped GaN, atomic H is generated from the decomposition of NH3 ...
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Article
Temperature behaviour of the yellow emission in GaN
Even in good quality undoped GaN samples, as assessed by the intense excitonic emission, the yellow band is present. This band has been attributed either to a shallow donor to deep double donor pair recombinat...
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Article
Open AccessA picture tells a thousand words: transmission electron microscopy of the ciliary transition zone in C. elegans
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Article
Tunnel radiation in the luminescence spectra of GaN-based heterostructures
Tunnel effects in luminescence spectra and electrical properties of LEDs based on InGaN/GaN-heterostructures made by different technological groups were studied. The tunnel radiation in a spectral region of 1....
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Article
Open AccessFiltering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth
Good-quality (11−22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescenc...
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Article
Room temperature Strong coupling in low finesse GaN microcavities
We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities. Angle dependent reflectivity measurements demonstrate strong-coupling with a Ra...
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Article
Advances in the Realisation of GaN-Based Microcavities: Towards Strong Coupling at Room Temperature
In a recent paper [Phys. Rev. B 68, 153313 (2003)], we reported the first experimental observation of the strong coupling regime in a GaN-based microcavity. The λ/2 GaN optical cavity was grown by molecular be...
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Article
Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED’s
The electrical and electroluminescent properties of MOVPE GaN p-n homojunctions have been analyzed as a function of temperature and bias. Electroluminescence is observed for V>3 V under dc and ac conditions. T...
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Article
Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular Beam Epitaxy Using NH3
Ammonia as nitrogen precursor has been used to grow III-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual...
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Article
Comparative Study of Gan Movpe Growth Processes Using Two Different “Surface Preparation-Carrier Gas” Combinations
The growth modes and resulting microstructures of GaN films grown by Metalorganic Vapor Phase Epitaxy (MOVPE) on (0001) sapphire with either a simple nitridation of the surface and N2 as carrier gas or with a tre...
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Chapter and Conference Paper
Keynote Address Wall Street: The New Launching Site for Space Projects
Looking back, it is remarkable how far the space business has progressed in the forty years since the launch of Sputnik in October 1957. Earth’s first artificial satellite was just 58 cm in diameter and weighe...
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Article
Si and Mg Doped GaN Layers Grown by Gas Source Molecular Beam Epitaxy Using Ammonia
The growth of GaN layers was carried out on c-plane sapphire substrates by molecular beam epitaxy (MBE) using NH3. Undoped GaN layers were grown at 830°C with growth rates larger than 1 μm/h. Optical properties a...
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Article
Characterization of Near Edge Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE
We report a comparative study by luminescence and reflectivity of GaN grown on sapphire by MOVPE, HVPE and GSMBE. Whatever the growth technique, undoped GaN shows well resolved reflectivity spectra, allowing h...
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Article
Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE
This work presents an optical characterization by luminescence and reflectivity of GaN layers grown on sapphire using MOVPE, HVPE and GSMBE. Well resolved optical spectra are obtained for each growth technique...
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Article
Effect of the Nitridation of the Sapphire (0001) Substrate on the GaN Growth
The analysis of the sapphire surface nitridation by in situ reflection high-energy electron diffraction evidences the formation of a relaxed AIN layer. Its role on the early stage of the GaN growth is investigate...
