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    Comparative Study of Gan Movpe Growth Processes Using Two Different “Surface Preparation-Carrier Gas” Combinations

    The growth modes and resulting microstructures of GaN films grown by Metalorganic Vapor Phase Epitaxy (MOVPE) on (0001) sapphire with either a simple nitridation of the surface and N2 as carrier gas or with a tre...

    P. Vennegues, S. Haffouz, A. Bouille, M. Leroux… in MRS Online Proceedings Library (1998)

  2. Article

    Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

    Selective and lateral overgrowth by Metal Organics Vapour Phase Epitaxy (MOVPE) was carried out until coalescence to produce smooth and optically flat thick GaN layers. A GaN epitaxial layer is first grown usi...

    B. Beaumont, M. Vaille, G. Nataf, A. Bouillé… in MRS Internet Journal of Nitride Semiconduc… (1998)

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