Abstract
We report a comparative study by luminescence and reflectivity of GaN grown on sapphire by MOVPE, HVPE and GSMBE. Whatever the growth technique, undoped GaN shows well resolved reflectivity spectra, allowing hetero-epitaxial strain to be taken into account in the interpretation of luminescence spectra. MOVPE provides the highest purity samples so far. From the luminescence study of n- and p-type doped samples, activation energies of 265 ± 10 meV and 34 ± 2 meV are deduced for Mg acceptors and Si donors respectively. From the luminescence spectra of HVPE grown samples, the presence of a perturbed interfacial n+ layer is evidenced.
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S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Japan. J. Appl. Phys. 35, L217 (1996).
N. Grandjean, J. Massies and M. Leroux, Appl. Phys. Lett. 69, 2071 (1996).
B. Gil, O. Briot and R.L. Aulombard, Phys. Rev. B 25, R17028 (1995).
P. Vennègues, B. Beaumont, M. Vaille and P. Gibart, J. Cryst. Growth, to be published.
M. Leroux, B. Beaumont, N. Grandjean, C. Golivet, P. Gibart, J. Massies, J. Leymarie, A. Vasson and A.M. Vasson, Mat. Sci. Eng. B in press.
B. Monemar, Phys. Rev. B 10, 676 (1974).
D. Volm, K. Oeftinger, T. Streibl, D. Kovalev, M. Ben-Chorin, J Diener, B.K. Meyer, J. Majewski, L. Eckey, A. Hoffmann, H. Amano, I. Akasaki, K. Hiramatsu and D. Detchprohm, Phys. Rev. B 53, 16543 (1996).
R. Dingle, D.D. Sell, S.E. Stokowski and M. Ilegems, Phys. Rev. B 4, 1211 (1971).
M. Tchounkeu, O. Briot, B. Gil, J.P. Alexis and R.L. Aulombard, J. Appl. Phys. 80, 5352 (1996).
D. Kovalev, B. Averboukh, D. Volm, B.K. Meyer, H. Amano and I. Akasaki, Phys. Rev. B 54, 2518 (1996).
B. Beaumont and P. Gibart, Semiconductor Heteroepitaxy, ed. by B. Gil and R.L. Aulombard (World Scientific, Singapore 1995), p 258
S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).
M. Leroux, B. Beaumont, N. Grandjean, P. Gibart, J. Massies and J.P. Faurie, MRS Internet J. Nitride Semicond. Res. 1, 25 (1996).
J. De-Sheng, Y. Makita, K. Ploog and H.J. Queisser, J. Appl. Phys. 53, 999 (1982).
B. Beaumont, M. Vaille, P. Lorenzini, P. Gibart, T. Boufaden and B. El Jani, MRS Internet J. Nitride Semicond. Res. 1, 17 (1996).
W. Gotz, N.M. Johnson, J. Walker, D.P. Bour and R.A. Street, Appl. Phys. Lett. 68, 667 (1996).
M. Smith, G.D. Chen, J.Y. Lin, H.X. Jiang, A. Salvador, B.N. Sverdlov, A. Botchkarev, H. Morkoç and B. Goldenberg, Appl. Phys. Lett. 68, 415 (1996).
Phil Won Yu, J. Appl. Phys. 48, 5043 (1977).
J. Neugebauer, Proc. 1stEuropean GaN Workshop (Rigi, Switzerland 1996) to be published.
H. Siegle, P. Thurian, L. Eckey, C. Thomsen, B.K. Meyer, H. Amano, I. Akasaki, T. Detchprohm and K. Hiramatsu, Appl. Phys. Lett. 68, 1265 (1996).
N. Grandjean, J. Massies, P. Vennégues, S. Laügt and M. Leroux, this volume.
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Leroux, M., Beaumont, B., Grandjean, N. et al. Characterization of Near Edge Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE. MRS Online Proceedings Library 449, 695–700 (1996). https://doi.org/10.1557/PROC-449-695
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DOI: https://doi.org/10.1557/PROC-449-695