19 Result(s)
within
I. N. Arsent’ev
Physics, general
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Article
Structure and optical properties of thin Al2O3 films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates
Structural analysis and optical spectroscopy are used to study the properties of ultrathin Al2O3 films deposited in an ion-plasma sputtering installation. It is possible to demonstrate that the technological meth...
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Article
Semiconductor lasers with internal wavelength selection
Laser diodes with a deep built-in trapezoidal large-period diffraction grating have been developed on the basis of InGaAs/GaAs/AlGaAs heterostructures. The electroluminescence and stimulated emission spectra a...
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Article
The effects of the porous buffer layer and do** with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures
In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the por...
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Article
Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers
The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer...
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Article
Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga x In1 − x As y P1 − y /GaInP/GaAs(001) heterostructures
Structural and optical properties of two- and three-layer epitaxial heterostructures containing GaInP/Ga x In1 − x As y
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Article
Double-band generation in quantum-well semiconductor laser at high injection levels
Spectral and emission-power characteristics of semiconductor lasers based on quantum-dimensional asymmetric heterostructures with separate confinement in a system of InGaAs/GaAs/AlGaAs alloys are studied in th...
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Article
Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation
Spectral and light-current characteristics of separate-confinement lasers that are based on InAl-GaAs/InP and InGaAsP/InP alloys and emit in the wavelength range of 1.5–1.8 μm are studied at high excitation le...
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Article
Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area
MOCVD and LPE technologies of deposition of GaAs and AlGaAs layers onto (100) GaAs substrates with a developed surface area are developed. Porous GaAs layers and surface microprofiles of dendrite and quasi-gra...
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Article
Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz
A new technology for thermally stable ohmic contacts with diffusion barriers based on the amorphous TiN and Ti(Zr)Bx interstitial phases is used in the development of microwave diodes for the millimeter region (w...
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Article
Infrared reflectance spectra and morphologic features of the surface of epitaxial AlxGa1−x As/GaAs(100) heterostructures with the ordered AlGaAs2 phase
The infrared reflectance spectra associated with lattice vibrations in the epitaxial AlxGa1−x As/GaAs(100) heterostructures with different Al content in the cation sublattice are studied. The structures are grown...
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Article
Formation of nanostructures in a Ga2Se3/GaAs system
The topology of GaAs(100) and GaAs(111) surfaces before and after short treatments in Se vapor is studied by atomic-force microscopy. On the basis of this study, as well as ellipsometry and electron microscopy...
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Article
Vegard’s law and superstructural phases in AlxGa1−x As/GaAs(100) epitaxial heterostructures
The lattice constants of AlxGa1−x As epitaxial alloys with various AlAs (x) contents are determined for AlxGa1−x As/GaAs(100) heterostructures grown by MOC-hydride epitaxy using X-ray diffractometry and an X-ray...
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Article
Synchrotron investigations of an electron energy spectrum in III–V-based nanostructures
Using synchrotron radiation, the spectra of an X-ray absorption near-edge structure in a region of P-L 2, 3 edges of a band spectrum are obtained for the first time. The spectra give insight into the local densit...
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Article
MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes
A MOCVD technology for growth of InGaAs/GaAs/InGaP laser heterostructures on a modified Epiquip VP-50-RP installation was developed. Mesa stripe laser diodes with threshold current density J th=100–200 A/cm2, int...
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Article
Position of the Fermi level on an indium arsenide surface treated in sulfur vapor
The characteristic features of the formation kinetics of In2S3 layers on indium arsenide substrates by heterovalent substitution are studied. The activation energies of two steps in this process are separated and...
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Article
Reconstruction and electron states of a Ga2Se3-GaAs heterointerface
It is established by electron microscopy and electron diffraction analysis that the formation of Ga2Se3(110) layers on GaAs(100) and (111) surfaces during heat treatment of the latter in selenium vapor is accompa...
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Article
Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor
The parameters of charge localization centers in the skin layer of gallium arsenide treated in selenium-arsenic vapor are investigated by deep-layer transient spectroscopy. It is established that the addition ...
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Article
Surface mobility and distribution of electrons in the accumulation layer of Ga2Se3/GaAs heterostructures
The dependence of the electron drift mobility in the undepleted conduction channels of Ga2Se3/GaAs heterostructures on the surface charge density is measured. The presence of charge coupling in the accumulation l...
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Article
Self-organizing nanoheterostructures in InGaAsP solid solutions
This paper discusses the photoluminescence and x-ray microstructural properties of epitaxial layers of solid solutions of InGaAsP isoperiodic with InP (100) and GaAs (100) substrates, obtained in the region of...
