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Article
Extended Quantum Model for Porous Silicon Formation
The formation of porous silicon (PS) by electrochemical dissolution of bulk Si is described by a new model involving quantum mechanical calculations of the tunneling probability of holes through small crystall...
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Article
Formation and Properties of Porous Si Superlattices
Porous silicon superlattices (PS-SL) were investigated by transmission electron microscopy (TEM), scanning electron microscopy (SEM), spectroscopic ellipsometry and reflectance spectroscopy. Type I superlattic...
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Article
The Ge/Pd/n-GaAs Ohmic Contact Interface Studied by Backside Raman Spectroscopy
The Ge/Pd/n-GaAs ohmic contact structure constitutes a near-ideal model system to test the applicability of the different metal/GaAs ohmic contact models. After annealing, an atomically flat interface between ...
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Article
Degradation of Porous Si Layers Caused by Thermal Treatment
Porous Si Alms formed on different p-doped substrates are studied by Raman spectroscopy, photoluminescence, and spectroscopic ellipsometry. Due to a thermal treatment the morphology is changed. A reduction in ...
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Article
Characterization of Porous Silicon Layers by Reflectance Spectroscopy
The characterization of porous silicon layers by optical reflectance spectroscopy in the infrared, visible and UV is presented. A fit of simulated to measured spectra is used to interprete the experimental res...
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Article
Evidence for a defect-assisted low resistive conductivity in cw laser beam mixed Au/Te/Au/GaAs contacts
CW laser beam mixed Au/Te/Au/n-GaAs contacts have been studied by RBS, Mössbauer and Raman spectroscopy. For both low and high laser power mixing, resulting in respectively Schottky-type and ohmic contacts, th...
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Article
Do** and beyond: towards a common model for the ohmic contact formation mechanism in the Au/Te/Au/-, AuGe/-, and Ge/Pd/n-GaAs systems
The results of our recent research on the ohmic contact formation mechanism in furnace alloyed Au/Te/Au/GaAs contacts are summarized, and preliminary Raman measurements on annealed Ge/Pd/GaAs structures are pr...
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Article
Raman Spectroscopy Study of Damage in n+ - GaAs Introduced by H2 and CH4/H2 RIE
Raman spectroscopy is used to study crystal damage and electrical damage in n+-GaAs produced by reactive ion etching (REE). H2 RIE is compared with CH4/H2 RIE and the effect of temperature annealing is studied. T...
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Article
On the Ohmic Contact Formation Mechanism in the Au/Te/N-GaAs System
Alloyed Au/Te/n—GaAs ohmic contacts, with contact resistivities comparable to those of the AuGe device standard, have been developed and studied by Mössbauer spectroscopy, Raman scattering and X-Ray Diffractio...
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Article
Raman Study of MOMBE and Plasma-MOVPE Grown III-V Layers on Si(100)
The crystalline quality of the transition region between buffer layer and epilayer in MOMBE (metalorganic molecular beam epitaxy) and plasma-MOVPE (metalorganic vapour phase epitaxy) grown GaAs layers on Si(10...