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    Chapter and Conference Paper

    Change in Microstructure and Magnetic Properties of Transition Metal Nitride Thin Films by Substrate Temperature

    The magnetic and mechanical properties of transition metal nitrides can be altered in many ways by their composition and microstructure, thus giving them excellent usability for spintronics and corrosion resis...

    M. Kamp, L. Voß, T. Bichel, M. Hicke in 4th International Conference on Nanotechno… (2020)

  2. No Access

    Article

    Photon Echo from an Ensemble of (In,Ga)As Quantum Dots

    Photon echo from trions and excitons in (In,Ga)As/GaAs quantum dots was studied theoretically and experimentally. Theoretical analysis allowed us to distinguish between photon echo signals from excitons and tr...

    Ia. A. Babenko, I. A. Yugova, S. V. Poltavtsev, M. Salewski, I. A. Akimov in Semiconductors (2018)

  3. Article

    Open Access

    Prototype of a bistable polariton field-effect transistor switch

    Microcavity exciton polaritons are promising candidates to build a new generation of highly nonlinear and integrated optoelectronic devices. Such devices range from novel coherent light emitters to reconfigura...

    H. Suchomel, S. Brodbeck, T. C. H. Liew, M. Amthor, M. Klaas in Scientific Reports (2017)

  4. Article

    Open Access

    Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells

    Temperature-resolved photoluminescence studies were performed on tensely-strained AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one at lower energy of localized origin resu...

    M. Dyksik, M. Motyka, R. Weih, S. Höfling, M. Kamp in Optical and Quantum Electronics (2017)

  5. Article

    Open Access

    Visualising Berry phase and diabolical points in a quantum exciton-polariton billiard

    Diabolical points (spectral degeneracies) can naturally occur in spectra of two-dimensional quantum systems and classical wave resonators due to simple symmetries. Geometric Berry phase is associated with thes...

    E. Estrecho, T. Gao, S. Brodbeck, M. Kamp, C. Schneider, S. Höfling in Scientific Reports (2016)

  6. Article

    Open Access

    Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

    Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ra...

    M. Dyksik, M. Motyka, M. Kurka, K. Ryczko, M. Dallner in Optical and Quantum Electronics (2016)

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    Article

    Multi-wave coherent control of a solid-state single emitter

    The coherent control of bright excitons in InAs quantum dots is demonstrated by combining heterodyne spectral interferometry with nonlinear multi-wave mixing. The spectro-temporal shape of the coherent emissio...

    F. Fras, Q. Mermillod, G. Nogues, C. Hoarau, C. Schneider, M. Kamp in Nature Photonics (2016)

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    Article

    Quantum dot micropillar cavities with quality factors exceeding 250,000

    We report on the spectroscopic investigation of quantum dot micropillar cavities with unprecedented quality factors. We observe a pronounced dependency of the quality factor on the measurement scheme and find...

    C. Schneider, P. Gold, S. Reitzenstein, S. Höfling, M. Kamp in Applied Physics B (2016)

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    Article

    Observation of non-Hermitian degeneracies in a chaotic exciton-polariton billiard

    In non-Hermitian systems, spectral degeneracies can arise that can cause unusual, counter-intuitive effects; here exciton-polaritons—hybrid light–matter particles—within a semiconductor microcavity are found t...

    T. Gao, E. Estrecho, K. Y. Bliokh, T. C. H. Liew, M. D. Fraser, S. Brodbeck in Nature (2015)

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    Article

    Dynamics of spatial coherence and momentum distribution of polaritons in a semiconductor microcavity under conditions of Bose-Einstein condensation

    The dynamics of spatial coherence and momentum distribution of polaritons in the regime of Bose-Einstein condensation in a GaAs microcavity with embedded quantum wells under nonresonant excitation with picosec...

    D. A. Mylnikov, V. V. Belykh, N. N. Sibeldin, V. D. Kulakovskii in JETP Letters (2015)

  11. No Access

    Chapter

    Single Semiconductor Quantum Dots in Microcavities: Bright Sources of Indistinguishable Photons

    In this chapter we will discuss the technology and experimental techniques to realize quantum dot (QD) single photon sources combining high outcoupling efficiencies and highest degrees of photon indistinguisha...

    C. Schneider, P. Gold, C.-Y. Lu, S. Höfling in Engineering the Atom-Photon Interaction (2015)

  12. Article

    Open Access

    Lasing from active optomechanical resonators

    Planar microcavities with distributed Bragg reflectors (DBRs) host, besides confined optical modes, also mechanical resonances due to stop bands in the phonon dispersion relation of the DBRs. These resonances ...

    T. Czerniuk, C. Brüggemann, J. Tepper, S. Brodbeck, C. Schneider in Nature Communications (2014)

  13. No Access

    Article

    Manipulating the self assembly of colloids in electric fields

    During the last decade the focus in colloid science on self-assembly has moved from mostly spherical particles and interaction potentials to more and more complex particle shapes, interactions and conditions. ...

    A. van Blaaderen, M. Dijkstra, R. van Roij in The European Physical Journal Special Topi… (2013)

  14. Article

    Open Access

    Microcavity controlled coupling of excitonic qubits

    Controlled non-local energy and coherence transfer enables light harvesting in photosynthesis and non-local logical operations in quantum computing. This process is intuitively pictured by a pair of mechanical...

    F. Albert, K. Sivalertporn, J. Kasprzak, M. Strauß, C. Schneider in Nature Communications (2013)

  15. No Access

    Article

    Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

    Modulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap ‘W’-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to...

    M. Motyka, F. Janiak, K. Ryczko, G. Sęk, J. Misiewicz, A. Bauer in Opto-Electronics Review (2011)

  16. No Access

    Article

    InGaN-Channel FETs - Growth, Technology and Characteristics

    Making use of the polar nature of III-nitride heterostructures, a new FET device concept is proposed. The structure contains an InGaN QW channel sandwiched in between two GaN barrier layers. The charge inthis ...

    E. Kohn, I. Daumiller, M. Neuburger, M. Seyboth in MRS Online Proceedings Library (2011)

  17. No Access

    Article

    GaN Homoepitaxy for Device Applications

    Epitaxial growth on GaN single bulk crystals sets new standards in GaN material quality. The outstanding properties provide new insights into fundamental material parameters (e.g. lattice constants, exciton bi...

    M. Kamp, C. Kirchner, V. Schwegler, A. Pelzmann in MRS Online Proceedings Library (2011)

  18. No Access

    Article

    Invasive pulmonale Aspergillose

    Die invasive pulmonale Aspergillose (IPA) ist eine lebensgefährliche Erkrankung, die vorwiegend bei Patienten mit gestörter Immunabwehr, z. B. im Rahmen einer akuten Leukämie, auftritt. Das vorliegende Fallbei...

    Dr. D. Knüttgen, M. Kamp, M. Ströhlein, J. Matten, A. Chemaissani in Der Anaesthesist (2009)

  19. No Access

    Article

    Optimization of the wallplug-efficiency of laser diodes by an electro-optical-thermal black-box model

    A black-box model for the optimization of the wallplug efficiency by choosing appropriate “external” parameters of an edge emitting laser – resonator length, operating current – is presented and applied to a h...

    R. März, M. Behringer, C. Hanke, M. Kamp, B. Stegmüller in Optical and Quantum Electronics (2005)

  20. No Access

    Chapter

    Strains and Stresses in GaN Heteroepitaxy -- Sources and Control

    We present a study of the sources of strain in GaN heteroepitaxy by in- and ex-situ measurement techniques. With an in-situ curvature measurement technique the strain development can be directly correla...

    A. Dadgar, R. Clos, G. Strassburger, F. Schulze, P. Veit in Advances in Solid State Physics (2004)

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