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  1. No Access

    Article

    Extended Quantum Model for Porous Silicon Formation

    The formation of porous silicon (PS) by electrochemical dissolution of bulk Si is described by a new model involving quantum mechanical calculations of the tunneling probability of holes through small crystall...

    H. Münder, St. Frohnhoff, M. G. Berger, M. Marso… in MRS Online Proceedings Library (2011)

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    Article

    Formation and Properties of Porous Si Superlattices

    Porous silicon superlattices (PS-SL) were investigated by transmission electron microscopy (TEM), scanning electron microscopy (SEM), spectroscopic ellipsometry and reflectance spectroscopy. Type I superlattic...

    M. G. Berger, R. Arens-Fischer, St. Frohnhoff, C. Dieker… in MRS Online Proceedings Library (2011)

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    Chapter

    Porous Si: From single porous layers to porosity superlattices

    Porous silicon has a manifold microscopic structure. Depending on the do** type and level of the substrate used for the anodization, pores with diameters up to 1 μm or down to a few nanometers can be formed [1]...

    M. G. Berger, St. Frohnhoff, W. Theiss, U. Rossow… in Porous Silicon Science and Technology (1995)

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    Chapter

    The influence of microelectronic processing steps on the properties of porous Si-layers

    In the view of possible applications of porous Si layers in optoelectronic devices it is necessary to study the influence of microelectronic processing steps on the properties of porous Si films. Therefore, ch...

    H. Münder, M. G. Berger, St. Frohnhoff… in Optical Properties of Low Dimensional Sili… (1993)