Abstract
The formation of porous silicon (PS) by electrochemical dissolution of bulk Si is described by a new model involving quantum mechanical calculations of the tunneling probability of holes through small crystallites (< 60 Å) into the electrolyte. This tunneling probability shows oscillations as a function of crystallite size. The presented model calculations are in agreement to the microstructure of p-PS — deduced from Raman measurements — as a function of etching parameters and substrate do** level.
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Münder, H., Frohnhoff, S., Berger, M.G. et al. Extended Quantum Model for Porous Silicon Formation. MRS Online Proceedings Library 358, 315 (1994). https://doi.org/10.1557/PROC-358-315
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DOI: https://doi.org/10.1557/PROC-358-315