10 Result(s)

Article

Formation and Properties of Porous Si Superlattices

Porous silicon superlattices (PS-SL) were investigated by transmission electron microscopy (TEM), scanning electron microscopy (SEM), spectroscopic ellipsometry and reflectance spectroscopy. Type I superlattic...

M. G. Berger, R. Arens-Fischer, St. Frohnhoff, C. Dieker… in MRS Online Proceedings Library (2011)

Article

Sustained phenotypic correction in a mouse model of hypoalphalipoproteinemia with a helper-dependent adenovirus vector

We examined the efficacy and host response to the adenovirus (Ad)-mediated delivery of human apolipoprotein A-I (APOA1) gene to the liver of APOA1^−/− mice. Administration of a first-generation vector (FGAd-AI) re...

K Oka, L M Belalcazar, C Dieker, E A Nour, P Nuno-Gonzalez, A Paul… in Gene Therapy (2007)

Article

Low-density lipoprotein receptor gene therapy using helper-dependent adenovirus produces long-term protection against atherosclerosis in a mouse model of familial hypercholesterolemia

We tested the efficacy of low-density lipoprotein receptor (LDLR) therapy using helper-dependent adenovirus (HD-Ad), comparing it with that of very low-density lipoprotein receptor (VLDLR), an LDLR homolog. We...

S Nomura, A Merched, E Nour, C Dieker, K Oka, L Chan in Gene Therapy (2004)

Article

Size distribution and optical properties of self-assembled Ge on Si

The distribution of Ge islands is analysed in order to understand their optical behaviour. The Ge islands described in this paper were deposited by low-pressure chemical vapour deposition at relatively high te...

L. Vescan, M. Goryll, T. Stoica, P. Gartner, K. Grimm, O. Chretien… in Applied Physics A (2000)

Article

Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition

Thin films of AlN and GaN were grown by pulsed laser deposition on c-plane sapphire substrates. It is demonstrated that the structure and surface morphology of layers can actively be controlled by adjusting th...

G. S. Sudhir, H. Fujii, W. S. Wong, C. Kisielowski… in Journal of Electronic Materials (1998)

Article

Tem/Hrem Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire

High resolution electron microscopy has been applied to study the structure of epitaxial GaN layers grown by MOVPE on SiC and sapphire substrates. Defects in GaN were systematically studied for undoped, and Si...

S. Ruvimov, Z. Liliental-Weber, C. Dieker, J. Washburn… in MRS Online Proceedings Library (1997)

Article

Reduction of Misfit Dislocation Density in Finite Lateral Size Si_1-xGe_x Films Grown by Selective Epitaxy

In Si_0.88Ge_0.12/Si strained layers misfit dislocations formed during growth in small pads are generated at a significantly higher critical thickness than on extended areas, while pads of lateral size of 10 µm or ...

L. Vescan, T. Stoica, C. Dieker, H. Lüth in MRS Online Proceedings Library (1993)

Article

Formation of Heterogeneous Thickness Modulations During Epitaxial Growth of LPCVD-Si_1-xGe_x/Si Quantum Well Structures

Transmission electron microscopy and photoluminescence studies were performed to determine the critical thickness for generation of misfit dislocations in Si^l-xGe_x layers grown by low pressure chemical vapor depo...

L. Vescan, W. Jäger, C. Dieker, K. Schmidt, A. Hartmann… in MRS Online Proceedings Library (1992)

Article

Observation of local hydrogen on nickel surfaces

T. Schober, C. Dieker in Metallurgical Transactions A (1983)