-
Article
Extended Quantum Model for Porous Silicon Formation
The formation of porous silicon (PS) by electrochemical dissolution of bulk Si is described by a new model involving quantum mechanical calculations of the tunneling probability of holes through small crystall...
-
Article
Formation and Properties of Porous Si Superlattices
Porous silicon superlattices (PS-SL) were investigated by transmission electron microscopy (TEM), scanning electron microscopy (SEM), spectroscopic ellipsometry and reflectance spectroscopy. Type I superlattic...
-
Chapter
X-ray photoemission spectroscopy
The reports about the observation of intensive photo- [1] and electroluminescence [2] motivated scientists all over the world to look for the basic mechanisms of the luminescences. During the following 2 years...
-
Chapter
Porous Si: From single porous layers to porosity superlattices
Porous silicon has a manifold microscopic structure. Depending on the do** type and level of the substrate used for the anodization, pores with diameters up to 1 μm or down to a few nanometers can be formed [1]...
-
Article
The Ge/Pd/n-GaAs Ohmic Contact Interface Studied by Backside Raman Spectroscopy
The Ge/Pd/n-GaAs ohmic contact structure constitutes a near-ideal model system to test the applicability of the different metal/GaAs ohmic contact models. After annealing, an atomically flat interface between ...
-
Chapter
The influence of microelectronic processing steps on the properties of porous Si-layers
In the view of possible applications of porous Si layers in optoelectronic devices it is necessary to study the influence of microelectronic processing steps on the properties of porous Si films. Therefore, ch...
-
Article
Degradation of Porous Si Layers Caused by Thermal Treatment
Porous Si Alms formed on different p-doped substrates are studied by Raman spectroscopy, photoluminescence, and spectroscopic ellipsometry. Due to a thermal treatment the morphology is changed. A reduction in ...
-
Article
Characterization of Porous Silicon Layers by Reflectance Spectroscopy
The characterization of porous silicon layers by optical reflectance spectroscopy in the infrared, visible and UV is presented. A fit of simulated to measured spectra is used to interprete the experimental res...
-
Article
Evidence for a defect-assisted low resistive conductivity in cw laser beam mixed Au/Te/Au/GaAs contacts
CW laser beam mixed Au/Te/Au/n-GaAs contacts have been studied by RBS, Mössbauer and Raman spectroscopy. For both low and high laser power mixing, resulting in respectively Schottky-type and ohmic contacts, th...
-
Article
Do** and beyond: towards a common model for the ohmic contact formation mechanism in the Au/Te/Au/-, AuGe/-, and Ge/Pd/n-GaAs systems
The results of our recent research on the ohmic contact formation mechanism in furnace alloyed Au/Te/Au/GaAs contacts are summarized, and preliminary Raman measurements on annealed Ge/Pd/GaAs structures are pr...
-
Article
Raman Spectroscopy Study of Damage in n+ - GaAs Introduced by H2 and CH4/H2 RIE
Raman spectroscopy is used to study crystal damage and electrical damage in n+-GaAs produced by reactive ion etching (REE). H2 RIE is compared with CH4/H2 RIE and the effect of temperature annealing is studied. T...
-
Article
On the Ohmic Contact Formation Mechanism in the Au/Te/N-GaAs System
Alloyed Au/Te/n—GaAs ohmic contacts, with contact resistivities comparable to those of the AuGe device standard, have been developed and studied by Mössbauer spectroscopy, Raman scattering and X-Ray Diffractio...
-
Article
Raman Study of MOMBE and Plasma-MOVPE Grown III-V Layers on Si(100)
The crystalline quality of the transition region between buffer layer and epilayer in MOMBE (metalorganic molecular beam epitaxy) and plasma-MOVPE (metalorganic vapour phase epitaxy) grown GaAs layers on Si(10...
