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  1. No Access

    Article

    Extended Quantum Model for Porous Silicon Formation

    The formation of porous silicon (PS) by electrochemical dissolution of bulk Si is described by a new model involving quantum mechanical calculations of the tunneling probability of holes through small crystall...

    H. Münder, St. Frohnhoff, M. G. Berger, M. Marso… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Formation and Properties of Porous Si Superlattices

    Porous silicon superlattices (PS-SL) were investigated by transmission electron microscopy (TEM), scanning electron microscopy (SEM), spectroscopic ellipsometry and reflectance spectroscopy. Type I superlattic...

    M. G. Berger, R. Arens-Fischer, St. Frohnhoff, C. Dieker… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    The Ge/Pd/n-GaAs Ohmic Contact Interface Studied by Backside Raman Spectroscopy

    The Ge/Pd/n-GaAs ohmic contact structure constitutes a near-ideal model system to test the applicability of the different metal/GaAs ohmic contact models. After annealing, an atomically flat interface between ...

    J. Watté, R. E. Silverans, H. Münder, C. J. Palmstrøm… in MRS Online Proceedings Library (1994)

  4. No Access

    Article

    Degradation of Porous Si Layers Caused by Thermal Treatment

    Porous Si Alms formed on different p-doped substrates are studied by Raman spectroscopy, photoluminescence, and spectroscopic ellipsometry. Due to a thermal treatment the morphology is changed. A reduction in ...

    H. Münder, M.G. Berger, S. Frohnhoff, H. Lüth, U. Rossow… in MRS Online Proceedings Library (1992)

  5. No Access

    Article

    Characterization of Porous Silicon Layers by Reflectance Spectroscopy

    The characterization of porous silicon layers by optical reflectance spectroscopy in the infrared, visible and UV is presented. A fit of simulated to measured spectra is used to interprete the experimental res...

    W. Theiß, P. Grosse, H. Münder, H. Lüth, R. Herino… in MRS Online Proceedings Library (1992)

  6. No Access

    Article

    Evidence for a defect-assisted low resistive conductivity in cw laser beam mixed Au/Te/Au/GaAs contacts

    CW laser beam mixed Au/Te/Au/n-GaAs contacts have been studied by RBS, Mössbauer and Raman spectroscopy. For both low and high laser power mixing, resulting in respectively Schottky-type and ohmic contacts, th...

    J. Watté, R. E. Silverans, H. Münder, K. Wuyts in MRS Online Proceedings Library (1992)

  7. No Access

    Article

    Do** and beyond: towards a common model for the ohmic contact formation mechanism in the Au/Te/Au/-, AuGe/-, and Ge/Pd/n-GaAs systems

    The results of our recent research on the ohmic contact formation mechanism in furnace alloyed Au/Te/Au/GaAs contacts are summarized, and preliminary Raman measurements on annealed Ge/Pd/GaAs structures are pr...

    K. Wuyts, J. Watté, R. E. Silverans, H. MüNder… in MRS Online Proceedings Library (1992)

  8. No Access

    Article

    Raman Spectroscopy Study of Damage in n+ - GaAs Introduced by H2 and CH4/H2 RIE

    Raman spectroscopy is used to study crystal damage and electrical damage in n+-GaAs produced by reactive ion etching (REE). H2 RIE is compared with CH4/H2 RIE and the effect of temperature annealing is studied. T...

    I. De Wolf, M. Van Hove, R. -G. Pereira, M. Van Rossum… in MRS Online Proceedings Library (1991)

  9. No Access

    Article

    On the Ohmic Contact Formation Mechanism in the Au/Te/N-GaAs System

    Alloyed Au/Te/n—GaAs ohmic contacts, with contact resistivities comparable to those of the AuGe device standard, have been developed and studied by Mössbauer spectroscopy, Raman scattering and X-Ray Diffractio...

    K. Wuyts, G. Langouche, H. Vanderstraeten, R.E. Silverans… in MRS Online Proceedings Library (1990)

  10. No Access

    Article

    Raman Study of MOMBE and Plasma-MOVPE Grown III-V Layers on Si(100)

    The crystalline quality of the transition region between buffer layer and epilayer in MOMBE (metalorganic molecular beam epitaxy) and plasma-MOVPE (metalorganic vapour phase epitaxy) grown GaAs layers on Si(10...

    J. Geurts, J. Finders, H. Münder, M. Kamp, M. Oehlers… in MRS Online Proceedings Library (1989)