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6 Result(s)

within A. S. Tregubova Remove this filter Classical and Continuum Physics Remove this filter

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  1. No Access

    Article

    Studying edge luminescence of n-3C-SiC epilayers grown on 6H-SiC substrates

    Epitaxial films of cubic silicon carbide (n-3C-SiC) polytype grown on hexagonal (6H-SiC) polytype substrates by sublimation epitaxy in vacuum have been studied. The films of the best structural quality exhibit lo...

    A. A. Lebedev, P. L. Abramov, E. V. Bogdanova, S. P. Lebedev… in Technical Physics Letters (2010)

  2. No Access

    Article

    Use of sublimation epitaxy for obtaining volume 3C-SiC crystals

    It is demonstrated that polytype-homogeneous, thick (>100 μm) epitaxial 3C-SiC layers of good structural quality with diameters of no less than 25 mm can be grown on 6H-SiC substrates by sublimation epitaxy in...

    A. A. Lebedev, P. L. Abramov, A. S. Zubrilov, E. V. Bogdanova… in Technical Physics Letters (2010)

  3. No Access

    Article

    Heteropolytype structures with SiC quantum dots

    Epitaxial silicon carbide layers of 3C-SiC polytype with an array of nanodimensional SiC quantum dots (QDs) have been obtained for the first time using an improved method of sublimation epitaxy in vacuum. The ...

    A. A. Lebedev, V. N. Petrov, A. N. Titkov, L. M. Sorokin… in Technical Physics Letters (2005)

  4. No Access

    Article

    Synthesis and structural characterization of a heterocomposition based on porous layers of SiC polytypes

    We have studied the structure of transverse cross sections of a heterocomposition consisting of porous layers of silicon carbide polytypes (substrate 6H-SiC/por-6H-SiC/epi-3C-SiC/por-3C-SiC). The epitaxial lay...

    L. M. Sorokin, G. N. Mosina, A. S. Tregubova, A. A. Lebedev… in Technical Physics Letters (2004)

  5. No Access

    Article

    Investigation of the p −-3C-SiC/n +-6H-SiC heterostructures with modulated do**

    A heterostructure of the p −-3C-SiC/n +-6H-SiC type with modulated do** was synthesized by sublimation epitaxy in vacuum. Features of the current-voltage characteristics and the electroluminescence spectra show...

    A. A. Lebedev, A. M. Strel’chuk, N. S. Savkina… in Technical Physics Letters (2002)

  6. No Access

    Article

    Investigation of the structure of (p)3C-SiC-(n)6H-SiC heterojunctions

    The structure of (p)3C-SiC-(n)6H-SiC epitaxial structures obtained by sublimation epitaxy in vacuum on 6H-SiC substrates was studied by methods of X-ray topography, X-ray diffraction, and transmission electron mi...

    A. A. Lebedev, G. N. Mosina, I. P. Nikitina, N. S. Savkina… in Technical Physics Letters (2001)