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  1. No Access

    Article

    Structural analysis of strained quantum dots using nuclear magnetic resonance

    Strained semiconductor nanostructures can be used to make single-photon sources1, detectors2 and photovoltaic devices3, and could potentially be used to create quantum logic devices4,5. The development of such ap...

    E. A. Chekhovich, K. V. Kavokin, J. Puebla, A. B. Krysa… in Nature Nanotechnology (2012)

  2. No Access

    Article

    Indium distribution inside quantum wells: The effect of growth interruption in MBE

    Quantitative analysis of high resolution electron microscopy image has been carried out to measure the indium distribution inside InGaN/GaN quantum well. The analyzed samples were nominally grown with 15% indi...

    A. M. Sanchez, P. Ruterana, S. Kret, P. Dłużewski… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Correlation Between the AlN Buffer Layer Thickness and the GaN Polarity in GaN/AlN/Si(111) Grown by MBE

    In this work it is shown that thin AlN buffer layers cause N-polarity GaN epilayers, with a high inversion domains density. When the AlN thickness increases, the polarity of the epilayer changes to Ga. The use...

    A. M. Sanchez, P. Ruterana, P. Vennegues, F. Semond… in MRS Online Proceedings Library (2011)

  4. No Access

    Chapter and Conference Paper

    Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra

    The elemental distribution in InAs/GaAs quantum dots has been analysed using the d transition edges in the imaginary part of the dielectric function, ɛ2(E), obtained from the electron energy loss spectrum from a ...

    A M Sánchez, M H Gass, A J Papworth, R Beanland… in Microscopy of Semiconducting Materials (2005)

  5. No Access

    Chapter and Conference Paper

    Map** of the effective electron mass in III–V semiconductors

    The effective mass in semiconductors is related to the mobility of charge carriers as well as the density of states. As electron mobility inherently influences semiconductor device performance, knowledge of th...

    M H Gass, A M Sanchez, A J Papworth, T J Bullough… in Microscopy of Semiconducting Materials (2005)

  6. No Access

    Chapter and Conference Paper

    Chemical composition and strain distribution of InAs/GaAs(001) stacked quantum rings

    The strain and composition distributions of InAs/GaAs(001) stacked self-assembled quantum rings (QRs) grown by MBE have been analyzed. Transmission electron microscopy (TEM) images revealed a high degree of ve...

    T Ben, A M Sánchez, S I Molina, D Granados… in Microscopy of Semiconducting Materials (2005)

  7. No Access

    Chapter and Conference Paper

    Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structure

    We have investigated changes in the plasmon loss peak seen in electron energy loss spectra from a 15 nm In0.2Ga0.8As layer in GaAs using a VG HB601 UX FEG-STEM. We observe a relative shift in plasmon peak positio...

    R Beanland, A M Sánchez, A J Papworth, M H Gass… in Microscopy of Semiconducting Materials (2005)

  8. No Access

    Article

    Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy

    Wurtzite GaN samples containing one, three and five 4nm thick high temperature (HT) AlN Interlayers (IL) have been grown on (0001) sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). N-polar...

    F. Fedler, J. Stemmer, R. J. Hauenstein, T. Rotter… in MRS Online Proceedings Library (2001)

  9. No Access

    Article

    Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001)

    We analyze by cross-sectional transmission electron microscopy the threading dislocation behavior when crossing an AlN intermediate layer in the GaN/AlN/GaN/sapphire system grown by molecular beam epitaxy. Dis...

    A. M. Sanchez, F. J. Pacheco, S. I. Molina, J. Stemmer… in Journal of Electronic Materials (2001)