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Chapter and Conference Paper
Electron Microscopy Analysis of AlGaN/GaN Nanowires Grown by Catalyst-Assisted Molecular Beam Epitaxy
Scanning transmission electron microscopy has been used to investigate the composition of nickel seeds which promote the columnar growth of AlGaN / GaN nanowires deposited by molecular beam epitaxy (MBE) on sa...
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Chapter and Conference Paper
Map** of the effective electron mass in III–V semiconductors
The effective mass in semiconductors is related to the mobility of charge carriers as well as the density of states. As electron mobility inherently influences semiconductor device performance, knowledge of th...
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Article
Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit
The influence of nitrogen incorporation on the microstructure of GaAsN/GaAs and GaInNAs/GaAs has been investigated using cross-sectional scanning transmission electron microscopy and laser Raman spectroscopy. ...
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Article
Carbon δ-do** GaAs superlattices
Carbon δ-do** GaAs superlattices incorporating 50 layers have been grown either by chemical beam epitaxy (CBE) using CBr4 as the source of the carbon or by metallorganic vapour phase epitaxy (MOVPE) using CCl4....
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Article
Hydrogen Passivated Carbon Acceptors in GaAs and AlAs: No Evidence for Carbon Donors
GaAs and AlAs layers grown by CBE and doped with either 12C or 13C have been passivated with hydrogen or deuterium. Infrared absorption lines due to hydrogen stretch modes, symmetric A1 modes and “carbon-like” E ...