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Chapter and Conference Paper
Nanoanalysis of InAs/GaAs quantum dots using low-loss EELS spectra
The elemental distribution in InAs/GaAs quantum dots has been analysed using the d transition edges in the imaginary part of the dielectric function, ɛ2(E), obtained from the electron energy loss spectrum from a ...
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Chapter and Conference Paper
Map** of the effective electron mass in III–V semiconductors
The effective mass in semiconductors is related to the mobility of charge carriers as well as the density of states. As electron mobility inherently influences semiconductor device performance, knowledge of th...
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Chapter and Conference Paper
Changes in plasmon peak position in a GaAs/Tn0.2Ga0.8As structure
We have investigated changes in the plasmon loss peak seen in electron energy loss spectra from a 15 nm In0.2Ga0.8As layer in GaAs using a VG HB601 UX FEG-STEM. We observe a relative shift in plasmon peak positio...
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Article
Fabrication of epitaxial III-nitride cantilevers on silicon (1 1 1) substrates
The molecular beam epitaxy of AlGaN/GaN epilayers on silicon (1 1 1) using an aluminum nitride buffer layer, and subsequent fabrication of free standing III-nitride cantilevers on Si(1 1 1) has been investigat...
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Article
High density net shape components by direct laser re-melting of single-phase powders
Direct Metal Laser Re-Melting is a variant of the Selective Laser Sintering process, a Rapid Prototy** (RP) technology. This tool-less manufacturing technology has the potential of producing complex, high qu...