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Article
Open AccessQuantum teleportation using highly coherent emission from telecom C-band quantum dots
A practical way to link separate nodes in quantum networks is to send photons over the standard telecom fibre network. This requires sub-Poissonian photon sources in the wavelength band around 1550 nm, with ph...
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Article
Open AccessHigh temperature AlInP X-ray spectrometers
Two custom-made Al0.52In0.48P p+-i-n+ mesa photodiodes with different diameters (217 µm ± 15 µm and 409 µm ± 28 µm) and i layer thicknesses of 6 µm have been electrically characterised over the temperature range ...
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Article
Open AccessInGaP electron spectrometer for high temperature environments
In this work, a 200 μm diameter InGaP (GaInP) p+-i-n+ mesa photodiode was studied across the temperature range 100 °C to 20 °C for the development of a temperature-tolerant electron spectrometer. The depletion la...
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Article
Open AccessA quantum light-emitting diode for the standard telecom window around 1,550 nm
Single photons and entangled photon pairs are a key resource of many quantum secure communication and quantum computation protocols, and non-Poissonian sources emitting in the low-loss wavelength region around...
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Article
Open AccessInGaP (GaInP) mesa p-i-n photodiodes for X-ray photon counting spectroscopy
In this paper, for the first time an InGaP (GaInP) photon counting X-ray photodiode has been developed and shown to be suitable for photon counting X-ray spectroscopy when coupled to a low-noise charge-sensiti...
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Article
Open AccessTemperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell
This paper investigates the effects of temperature on an InGaP (GaInP) 55Fe X-ray photovoltaic cell prototype for a radioisotope microbattery (also called a nuclear microbattery). An In0.5Ga0.5P p-i-n (5 μm i-lay...
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Article
Electron Beam Pumped MQW InGaN/GaN Laser
E-beam pumped lasers are attractive for Laser Cathode Ray Tubes (LCRT) in projection displays and a variety of applications typically associated with optically pumped lasers. For the first time an InGaN/GaN mu...
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Article
Element-sensitive measurement of the hole–nuclear spin interaction in quantum dots
Quantum dots are a promising host for spin-based qubits. Whereas nuclear-field fluctuations adversely affect electron-spin coherence, the smaller hyperfine interaction between holes and nuclei makes holes a pr...
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Article
Structural analysis of strained quantum dots using nuclear magnetic resonance
Strained semiconductor nanostructures can be used to make single-photon sources1, detectors2 and photovoltaic devices3, and could potentially be used to create quantum logic devices4,5. The development of such ap...
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Article
Characterization of intersubband devices combining a nonequilibrium many body theory with transmission spectroscopy experiments
In this paper we apply a microscopic nonequilibrium many body Keldysh Green′s functions approach to an analysis of complex intersubband optical materials and devices. The calculated absorption/gain spectra are...
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Article
Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer
The deposition of an amorphous ZnTe seed layer of thickness 10 nm and its subsequent solid-phase crystallization are implemented prior to the start of molecular-beam epitaxy of ZnTe layers on GaAs(100) substra...
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Article
Role of hydrogen in cathodoluminescence of ZnTe monocrystals
