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Article
High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer
Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown ...
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Article
Characterization of InGaN Quantum Wells Grown by Molecular Beam Epitaxy (MBE) Using Ammonia as the Nitrogen Source
Single quantum well InGaN was grown by molecular beam epitaxy with ammonia as the nitrogen source. The samples were grown on (0001) sapphire substrates. The photoluminescence (PL) intensity of InGaN quantum we...
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Article
High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer
Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown...
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Article
Monolithically Integrated Dual-Band Quantum Well Infrared Photodetector
A monolithic quantum well infrared photodetector (QWIP) structure has been presented that is suitable for dual bands in the two atmospheric transmission windows of 3 - 5.3 fum and 7.5 - 14fum, respectively. Th...
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Article
P-type Mg-doped GaN grown by molecular beam epitaxy using ammonia as the nitrogen source
The electrical and luminescent properties of Mg-doped GaN films grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source have been investigated. Due to their different growth environments, th...
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Article
The Problem of Do** Wide Gap II-VI Compound Semiconductors and Its Solutions
Wide gap II-VI compound semiconductors are difficult to be doped amphoterically. After more than thirty years of research in II-VI compound semiconductors, there does not even exist a satisfatory simultaneous ...
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Article
Low Temperature Growth of Gaas Quantum Well Lasers by Modulated Beam Epitaxy
GaAs single quantum well lasers have been successfully grown at low temperatures by a modulated beam epitaxy process in which the Al/Ga flux is held constant while the As flux is periodically shut off to produ...
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Article
High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells
The pressure coefficients (α) of the excitonic transitions arising from the conduction (CB) to the heavy (HH) and light (LH) hole sub-bands of a GaSb-AlSb multiple quantum well structure (MQW) grown on a GaAs ...