21 Result(s)
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Article
Observation of the CdTe-GaAs Interface by High Resolution Electron Microscopy
CdTe films have been grown on GaAs substrates with two types of interfaces — one with the epitaxial relation (111)CdTe║(100)GaAs and the other with (100)CdTe║(100)GaAs. High resolution electron microscope observa...
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Article
Electron Diffraction Study of Multilayer Structures with Partially Coherent Illumination
The effect of partial coherency on electron diffraction patterns of Cd1−xMnxTe–Cd1−yMny Te superlattices has been investigated. Observed diffraction patterns are compared with intensity calculations performed usi...
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Article
Epitaxy of CdTe on (100) GaAs
Two epitaxial orientations [(111) and (100)] of CdTe are grown on (100) GaAs in the presence of a 14.6% lattice mismatch. Consistent nucleation of a selected orientation is achieved by employing specific growt...
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Article
Quantum Confinement Effects in ZnSe/ZnMnSe Strained-Layer Superlattices
Photoluminescence and photoluminescence excitation spectroscopy have been used to identify excited state energy levels in ZnSe/ZnMnSe strained-layer superlattices. Several ZnSe/ZnMnSe superlattices have been g...
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High Resolution Electron Microscope Study of CdTe-Cd0.6Mn0.4Te Superlattices
Structures of CdTe-Cd0.6Mn0.4Te superlattices which are caused by the lattice mismatch between superlattice layers have been studied by high resolution electron microscopy (HREM). In thin-layer superlattices, the...
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Article
Transient Spectroscopy and Related Optical Studies in Diluted Magnetic Semiconductor Superlattices
Recent successes in molecular beam (MBE) epitaxial growth of diluted magnetic semiconductor (DMS) artificial microstructures are now generating structures in which optically excited lower dimensional electroni...
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Article
Anomalous Magneto-Optical and Magnetic Behavior in a Two-Dimensional Magnetic Semiconductor Superlattice MnSe/ZnSe
The growth by molecular beam epitaxy (MBE) of ultrathin layer II-VI compound semiconductors with magnetic constituents has opened new possibilities in the study of both lower dimensional electronic and magneti...
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Article
Submicron Heterostructures of Diluted Magnetic Semiconductors
The successful thin film growth of diluted magnetic semiconductors (DMS) by molecular beam epitaxy has “nucleated” a new field of research in which the DMS material is incorporated in a variety of novel superl...
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Article
Monte Carlo Simulation of the Growth of ZnSe by MBE
A Monte Carlo study of the growth of ZnSe by Molecular beam epitaxy is presented. The study is focused on the role of surface kinetic reactions on the structural quality of the epilayers. Two different models ...
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Article
Influence of Electric Fields on Exciton Luminescence in ZnSe/(Zn,Mn)Se Superlattices
Application of moderate external electric fields to ZnSe/(Zn,Mn)Se superlattices is shown to yield readily measurable spectral shifts of the exciton ground state resonance in the quantum well limit. This shows...
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Article
II-VI / III-V Heterostructures
The integration of several optoelectronic device functions onto a common substrate material is an area which is currently being actively pursued. In an effort to achieve this objective, experiments are under w...
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Article
Electron Microscope Study of Initial Stage of Growth of ZnSe on GaAs
Recent molecular beam epitaxy (MBE) studies have shown that depending on surface conditions of GaAs two different growth modes, layer-by-layer or island, occur at the initial stage of the growth of ZnSe on (10...
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Article
Metastable Zincblende MnTe and MnSe: MBE Growth and Characterization
Epilayers of metastable zincblende MnSe and MnTe have been grown by molecular beam epitaxy. The MnSe structures have been used to study magnetic ordering in thin layers by means of optical and magnetic measure...
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Article
Low Interface State Density at Pseudomorphic ZnSe/Epitaxial GaAs Interface
The electrical properties of pseudomorphic ZnSe/epilayer GaAs heterointerfaces, grown by MBE, have been investigated by capacitance versus voltage (C-V) and current versus voltage (I- V) measurements. Hole acc...
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Article
Photoluminescence of ZnSe Epilayers on GaAs Under Hydrostatic Pressure
The near bandgap photoluminescence of ZnSe epilayers grown on GaAs substrates is measured for pressures up to ~25 kbar using a diamond anvil cell at T = 9 K. The bandgap changes with pressure, dE/dp, for pseud...
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Article
Interface Properties of Heterovalent InSb Multilayer Structures
Multilayer InSb/CdTe and InSb/MnTe heterostructures are grown by molecular beam epitaxy. The analysis of multilayer structures by transmission electron microscopy (TEM) and x-ray rocking curves confirms the pr...
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Article
Photo-Assisted Chemical Beam Epitaxy of II-VI Semiconductors
Photo-assisted epitaxy is a versatile growth technique which allows in situ modification of surface chemical reactions. Under appropriate growth conditions the surface stoichiometry can be tuned by selectively de...
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Article
Laser-Assisted Growth of ZnSe by Metalorganic Molecular Beam Epitaxy
By employing metalorganic molecular beam epitaxy (MOMBE), the heteroepitaxy of ZnSe on GaAs has been achieved using diethylselenium and diethylzinc. Significant (10x ∼ 15x) growth rate enhancement has been obs...
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Article
Gas Source Molecular Beam Epitaxy of ZnSe on (In,Ga)P
The wide bandgap semiconductor ZnSe has been nucleated on epitaxial (In,Ga)P buffer layers (on GaAs substrates) having various In compositions, and hence various lattice constants. The III-V ternary alloy offe...
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Article
N- and P-Type Do** of ZnSe Using Gas Source Molecular Beam Epitaxy
High quality ZnSe:Cl has been grown on GaAs by gas source molecular beam epitaxy (GSMBE); elemental Zn and H2Se are used as source materials, with ZnCl2 as a dopant source for donors. Atomic Cl concentrations ([C...
