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Photo-Assisted Chemical Beam Epitaxy of II-VI Semiconductors

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Abstract

Photo-assisted epitaxy is a versatile growth technique which allows in situ modification of surface chemical reactions. Under appropriate growth conditions the surface stoichiometry can be tuned by selectively desorbing surface species, or by decomposing particular molecular species, or by affecting the reaction rate constant of a chemical process. A potential application of laser-assisted growth rate enhancement or growth rate retardation is in the area of maskless selective area epitaxy. We have investigated the effect of photons on the growth of ZnSe by solid and gaseous source molecular beam epitaxy using various combination of sources. Significant growth rate enhancement (up to 20x), as well as growth rate suppression (as much as 70%), have been observed depending on the sources employed. In all cases, the laser power density remained low (∼200 mW/cm2), and the creation of photo-generated carriers was found to be required. An electron beam incident to the surface has a similar effect and increased the growth rate.

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Acknowledgement

The authors would like to thank J. House for obtaining the PL measurements and discussion of the data; H. Nanto, C. Huber, S. Park, and G. Petrich are acknowledged for their numerous contributions to this work. Special thanks are extended to K. Tamura, C. Hultgrem and E. P. Ippen for their assistance with the various optical experiments. We are grateful to Spectra-Physics for the use of the dye laser. The research was sponsored in part by the National Science Foundation (ECS-8905909), the Defense Advanced Research Projects Agency (DARPA) under contract No. 542381 (National Center for Integrated Photonic Technology), and by the University Research Initiative (Contract No. 216-25013) sponsored by DARPA through the Office of Naval Research.

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Authors and Affiliations

  1. Department of Electrical Engineering and Computer Science, Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    E. Ho & L. A. Kolodziejski

  2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    G. A. Coronado

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  1. E. Ho
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Ho, E., Coronado, G.A. & Kolodziejski, L.A. Photo-Assisted Chemical Beam Epitaxy of II-VI Semiconductors. MRS Online Proceedings Library 279, 635–644 (1992). https://doi.org/10.1557/PROC-279-635

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