-
Article
Large-area oxidation of AlAs layers for dielectric stacks and thick buried oxides
The wet oxidation of AlAs and AlGaAs has been limited to relatively small lateral dimensions and relatively thin layers. Approaches are described to extend the oxide dimensions both horizontally and vertically...
-
Article
X-Ray diffraction analysis of bandgap-engineered distributed bragg reflectors
Compositionally graded interfaces between constitutive layers of the distributed Bragg reflectors (DBRs) in vertical cavity surface emitting lasers (VCSELs) greatly reduce operating voltages. In this paper, we...
-
Article
Investigation of electric fields, interface charges, and conduction band offsets at ZnSe/GaAs heterojunctions with a novel photoreflectance technique
ZnSe/GaAs heterojunctions were investigated by contactless electroreflectance and photoreflectance techniques. Negative surface charge densities on the order of 1012 cm-2 were observed for films grown on n-type G...
-
Chapter
Microcavities in Channel Waveguides
We introduce and analyse a new type of resonant microcavity consisting of a channel waveguide and a one-dimensional photonic crystal. A band gap for the guided modes is opened and a state is created within the...
-
Article
Gas Source Molecular Beam Epitaxy of ZnSe on (In,Ga)P
The wide bandgap semiconductor ZnSe has been nucleated on epitaxial (In,Ga)P buffer layers (on GaAs substrates) having various In compositions, and hence various lattice constants. The III-V ternary alloy offe...
-
Article
N- and P-Type Do** of ZnSe Using Gas Source Molecular Beam Epitaxy
High quality ZnSe:Cl has been grown on GaAs by gas source molecular beam epitaxy (GSMBE); elemental Zn and H2Se are used as source materials, with ZnCl2 as a dopant source for donors. Atomic Cl concentrations ([C...
-
Article
Gas source molecular beam epitaxy of ZnSe and ZnSe:N
The use of gas source molecular beam epitaxy, using hydrogen selenide and elemental Zn as source materials, has resulted in the growth of high quality ZnSe on closely lattice-matched GaAs and (In,Ga)P. The und...
-
Article
Elimination of surface site blockage due to ethyl species in MOMBE of ZnSe
The metalorganic molecular beam epitaxial growth of ZnSe using diethylzinc and/or diethylselenium gas sources results in an abnormally low growth rate of several hundred angstroms per hour. Experiments with di...
-
Article
Photo-Assisted Chemical Beam Epitaxy of II-VI Semiconductors
Photo-assisted epitaxy is a versatile growth technique which allows in situ modification of surface chemical reactions. Under appropriate growth conditions the surface stoichiometry can be tuned by selectively de...
-
Article
Laser-Assisted Growth of ZnSe by Metalorganic Molecular Beam Epitaxy
By employing metalorganic molecular beam epitaxy (MOMBE), the heteroepitaxy of ZnSe on GaAs has been achieved using diethylselenium and diethylzinc. Significant (10x ∼ 15x) growth rate enhancement has been obs...
-
Chapter
Quantum-sized microstructures of wide bandgap II–VI semiconductors
The past several years have seen dramatic advances in epitaxial growth techniques which have led the way to an improved understanding of the properties of II–VI materials and their alloys. The renewed interest...
-
Article
Interface Properties of Heterovalent InSb Multilayer Structures
Multilayer InSb/CdTe and InSb/MnTe heterostructures are grown by molecular beam epitaxy. The analysis of multilayer structures by transmission electron microscopy (TEM) and x-ray rocking curves confirms the pr...
-
Article
Metastable Zincblende MnTe and MnSe: MBE Growth and Characterization
Epilayers of metastable zincblende MnSe and MnTe have been grown by molecular beam epitaxy. The MnSe structures have been used to study magnetic ordering in thin layers by means of optical and magnetic measure...
-
Article
Low Interface State Density at Pseudomorphic ZnSe/Epitaxial GaAs Interface
The electrical properties of pseudomorphic ZnSe/epilayer GaAs heterointerfaces, grown by MBE, have been investigated by capacitance versus voltage (C-V) and current versus voltage (I- V) measurements. Hole acc...
-
Article
Photoluminescence of ZnSe Epilayers on GaAs Under Hydrostatic Pressure
The near bandgap photoluminescence of ZnSe epilayers grown on GaAs substrates is measured for pressures up to ~25 kbar using a diamond anvil cell at T = 9 K. The bandgap changes with pressure, dE/dp, for pseud...
-
Chapter
Exciton Self-Trap** in ZnSe/ZnTe Superlattice Structures
The growth by molecular beam epitaxy (MBE) and the optical and structural characterization of a variety of wide bandgap II–VI compound semiconductors have attracted much attention in the last few years; a revi...
-
Chapter
Biexcitons in ZnSe Quantum Wells
The quasi-2-dimensional character of electron and hole wavefunctions in a semiconductor quantum well leads to an enhancement of the exciton binding energy and oscillator strength. This effect has been justifie...
-
Chapter
II-VI/III-V Heterointerfaces: Epilayer-On-Epilayer Structures
The integration of several optoelectronic device functions onto a common substrate material is an area which is currently being actively pursued. In an effort to achieve this objective, experiments are under w...
-
Chapter
Excitons in II-VI Compound Semiconductor Superlattices: A Range of Possibilities with ZnSe Based Heterostructures
In a recently short time, less than four years, application of advanced epitaxial methods have yielded a number of semiconductor artificial microstructures which are based on II-VI compound semiconductors. Exc...
-
Article
Electron Microscope Study of Initial Stage of Growth of ZnSe on GaAs
Recent molecular beam epitaxy (MBE) studies have shown that depending on surface conditions of GaAs two different growth modes, layer-by-layer or island, occur at the initial stage of the growth of ZnSe on (10...
