42 Result(s)
within
R. Venkatasubramanian
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Article
ABCC3 genetic variants are associated with postoperative morphine-induced respiratory depression and morphine pharmacokinetics in children
Respiratory depression (RD) is a serious side effect of morphine and detrimental to effective analgesia. We reported that variants of the ATP binding cassette gene ABCC3 (facilitates hepatic morphine metabolite e...
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Article
High-Performance Three-Stage Cascade Thermoelectric Devices with 20% Efficiency
The use of advanced materials has resulted in a significant improvement in thermoelectric device conversion efficiency. Three-stage cascade devices were assembled, consisting of nano-bulk Bi2Te3-based materials o...
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Article
Improvement in the Thermoelectric Figure-of-Merit of TAGS-85 by Rare Earth Additions
TAGS-85 is a well-known thermoelectric material based on germanium monotelluride that exhibits a second-order displacive transformation from a high-temperature cubic to a low-temperature rhombohedral polymorph...
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Article
Open AccessMechanistic modelling of dynamic MRI data predicts that tumour heterogeneity decreases therapeutic response
Dynamic contrast-enhanced magnetic resonance imaging (DCE-MRI) contains crucial information about tumour heterogeneity and the transport limitations that reduce drug efficacy. Mathematical modelling of drug de...
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Round-robin measurements of two candidate materials for a Seebeck coefficient Standard Reference Material™
A Standard Reference Material (SRM™) for the Seebeck coefficient is critical for inter-laboratory data comparison and for instrument calibration. To develop this SRM™, we have conducted an international round-rob...
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Article
Laparoscopic adrenalectomy — a review of initial 24 consecutive patients
To analyze patient demographics, pathology, surgical procedure and outcome in initial 24 consecutive patients who underwent laparoscopic adrenalectomy in our department.
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Article
Thermal Stability of p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2Te2-x Sex Thermoelectric Superlattice Thin Film Devices
Thermolectric devices have been constructed using Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te2-xSex superlattice thin films. Since these devices are intended for use in systems that will operate at elevated temperatures over ...
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Article
High-Temperature PbTe Thin Films for Use in Cascade Thermoelectric Power Generation
PbTe-based thin films were deposited by thermal evaporation at temperatures ranging from ambient temperature to 430°C on different vicinal GaAs (100) substrates and BaF2 (111). This materials system is being eval...
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Article
A cylindrical furnace for absorption spectral studies
A cylindrical furnace with three heating zones, capable of providing a temperature of 1100°C, has been fabricated to enable recording of absorption spectra of high temperature species. The temperature of the f...
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Article
Optical constants of Bi2Te3 and Sb2Te3 measured using spectroscopic ellipsometry
In this work, we present the optical constants of bismuth telluride (Bi2Te3), and antimony telluride (Sb2Te3) determined using spectroscopic ellipsometry (SE). The spectral range of the optical constants is from ...
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Article
Thermoelectric Properties of ZnSb Films Grown by MOCVD
The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various...
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Article
Enhancement in Figure-Of-Merit with Superlattice Structures for Thin-Film Thermoelectric Devices
Thin-film superlattice (SL) structures in thermoelectric materials are shown to be a promising approach to obtaining an enhanced figure-of-merit, ZT, compared to conventional, state-of-the-art bulk alloyed mat...
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Article
Development of High-Performance GaAs Solar Cells on Large Grain Polycrystalline Ge Substrates
The characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AlGaAs double-hetero (DH) structures grown on these substrate...
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Article
A Monte Carlo Model of GaAs [111]B Epitaxy
The Monte Carlo (MC) technique has been frequently used to model semiconductor thin-film epitaxy, especially for the cases of homo-epitaxial growth on Si (100) and GaAs (100) surfaces. In a recent paper, it wa...
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Article
Surface Ordering of MBE Grown 001 Ga0.5Al0.5As–a Theoretical Study
The surface kinetics of MBE growth of (100) Ga0.5Al0.5As are studied theoretically using a stochastic model which is based on master equation with random distribution approximation. The kinetic processes consider...
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Article
MBE Do** Kinetics - A Rate Equation Study
A rate equation model based on the master equation is developed for the study of MBE do** kinetics. The model includes elementary surface processes such as adsorption, evaporation and migration of atoms. The...
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Article
A Theoretical Study of Amorphous-Crystalline Transition in Si [111] MBE Growth
The amorphous crystalline transition temperature for Si MBE growth is higher for [111] growth than for [100] growth. The mechanism for the growth of amorphous Si in [111] growth is thought to be due to the pos...
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Article
Properties and use of cycled grown OMVPE GaAs:Zn, GaAs:Se, and GaAs:Si layers for high-conductance GaAs tunnel junctions
Heavily doped GaAs layers for high conductance GaAs tunnel junctions have been grown by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) using Zn as the dopant for thep + regions an...
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Article
MBE growth of compound semiconductors: Part II. Applications of the stochastic model
In this part of the work (Part II), two typical applications of the stochastic model to the MBE growth kinetic studies are presented. The applications are the MBE growth kinetics of a hypothetical compound sem...
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MBE growth of compound semiconductors: Part I. Stochastic modeling
A stochastic model for the MBE growth kinetic study of compound semiconductors is developed based on the master equation approach, the solid-on-solid restriction, and the quasi-chemical approximation. The deve...
