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II-VI / III-V Heterostructures

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Abstract

The integration of several optoelectronic device functions onto a common substrate material is an area which is currently being actively pursued. In an effort to achieve this objective, experiments are under way to examine the epitaxial growth and material properties of a variety of both II–VI and III–V compounds grown on a substrate where the II–VI/III–V heterostructure can be utilized. This paper describes some recent developments involving the molecular beam epitaxial (MBE) growth and characterization of two important ll-VI/lll-V heterostructures: ZnSe/GaAs and InSb/CdTe;. a comparison is made between epitaxial layer/substrate interfaces and epilayer/epilayer interfaces for both heterostructures. The ZnSe/GaAs heterointerface, having a 0.25% lattice constant mismatch, has potential for use in passivation of GaAs devices. The InSb/CdTe heterointerface possesses an even closer lattice match, ~0.05% (comparable to the (AI,Ga)As/GaAs material system), and is motivated by possible device applications provided by InSb/CdTe quantum wells.

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Acknowledgement

The work briefly summarized above has resulted from the effort of a large number of people. The authors would like to acknowledge the hard work of several students who have made substantial contributions: G. D. Studtmann, J. L. Glenn, J. M. Gonsalves, M. Haggerott, and T. Heyen. We would also like to thank R. Dawson and A. J. Noreika for sharing their expertise in the MBE of InSb, M. R. Melloch, J. A. Cooper, R. F. Pierret for collaborating in the develpment of the MISFET devices, M. Vaziri for performing the ZnSe transport measurements, D. Lubelski for his dedication to the operation of the MBE facility, U. Debska at Purdue for providing the vacuum distilled source material, and T. Mitsuyu and Matsushita Electric Industrial Co. for donation of the purity- enhanced Zn and Se source material. Research support at Purdue was provided by Air Force Office of Scientific Research Grant 85-0185, U.S. Office of Naval Research Contract N00014-86-K0522, SDIO/IST-Naval Research Laboratory Contract N00014-86-K2017, Defense Advanced Research Projects Agency (DARPA)/Office of Naval Research University Research Initiative Program N00014-86-K0760, the National Science Foundation-MRG Grant DMR-8520866, and a joint AFOSR/ONR Research Instrumentation Grant N00014-86-G-0156. The research at Brown was supported by DARPA Contract N00014-86-K0377.

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Authors and Affiliations

  1. School of Electrical Engineering, Purdue University, West Lafayette, IN, 47907

    L. A. Kolodziejski & R. L. Gunshor

  2. Materials Engineering, Purdue University, West Lafayette, IN, 47907

    N. Otsuka

  3. Division of Engineering and Department of Physics, Brown University, Providence, RI, 02912

    A. V. Nurmikko

Authors
  1. L. A. Kolodziejski
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  2. R. L. Gunshor
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  3. N. Otsuka
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  4. A. V. Nurmikko
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Kolodziejski, L.A., Gunshor, R.L., Otsuka, N. et al. II-VI / III-V Heterostructures. MRS Online Proceedings Library 102, 113–123 (1987). https://doi.org/10.1557/PROC-102-113

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