Abstract
Photoluminescence and photoluminescence excitation spectroscopy have been used to identify excited state energy levels in ZnSe/ZnMnSe strained-layer superlattices. Several ZnSe/ZnMnSe superlattices have been grown by MBE with different concentrations of Mn in the barrier material and consequently with different degrees of lattice mismatch between the ZnSe well and ZnMnSe barrier materials. A strain-induced decrease of the band gap is observed in these structures. Photoluminescence excitation spectra reveal a strain dependent splitting of the heavy and light hole n=1 subbands. The magnitude of this splitting, as well as the observed photoluminescence red-shift, are compatible with expectations based on calculated strains and the deformation potentials of ZnSe.
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Bylsma, R.B., Frohne, R., Kossut, J. et al. Quantum Confinement Effects in ZnSe/ZnMnSe Strained-Layer Superlattices. MRS Online Proceedings Library 56, 223–228 (1985). https://doi.org/10.1557/PROC-56-223
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DOI: https://doi.org/10.1557/PROC-56-223