Skip to main content

7 Result(s)

within E. Selvig Remove this filter Optical and Electronic Materials Remove this filter

and

  1. No Access

    Article

    Descending Infrared Transmission Spectra of CdZnTe Substrates Due to Surface Roughness

    The (111)B-oriented Cd0.96Zn0.04Te substrates with rough surfaces have been found to have infrared (IR) transmission spectra which decrease rapidly in intensity as the photon energy increases. The rough surfaces ...

    E. Selvig, K. O. Kongshaug, R. Haakenaasen, T. Lorentzen… in Journal of Electronic Materials (2019)

  2. No Access

    Article

    Improved Passivation Effect Due to Controlled Smoothing of the CdTe-HgCdTe Interface Gradient by Thermal Annealing

    HgCdTe films grown by liquid phase epitaxy were passivated with CdTe grown by molecular beam epitaxy. A series of annealing tests with different temperatures and durations were then carried out in order to rea...

    R. Haakenaasen, E. Selvig, A. C. Heier, T. Lorentzen… in Journal of Electronic Materials (2019)

  3. No Access

    Article

    Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth

    We have studied state-of-the-art CdZnTe (211)B and (111)B substrates and compared them to each other and to substrates from an alternative vendor. The CdZnTe surface has been characterized both as-received and...

    R. Haakenaasen, O. Lauten, E. Selvig, K. O. Kongshaug… in Journal of Electronic Materials (2019)

  4. No Access

    Article

    HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization

    This paper presents results from recent work on molecular beam epitaxy growth of HgCdTe at the Norwegian Defence Research Establishment (FFI), including studies of material properties and fabrication of photod...

    R. Haakenaasen, E. Selvig, C. R. Tonheim… in Journal of Electronic Materials (2010)

  5. No Access

    Article

    Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy

    The defect morphology in HgTe and CdHgTe was studied in (211)B-oriented layers grown in a 20°C temperature range around the optimal growth temperature. The density of defects varies strongly with the growth te...

    E. Selvig, C.R. Tonheim, T. Lorentzen, K.O. Kongshaug… in Journal of Electronic Materials (2008)

  6. No Access

    Article

    Nanowires in the CdHgTe Material System

    HgTe nanowires have been grown by molecular beam epitaxy (MBE). They are nucleated at Au particles on Si or GaAs substrates and subsequently self-organize and grow laterally on the surface into 20–50 nm wide, ...

    R. Haakenaasen, E. Selvig, S. Hadzialic, T. Skauli… in Journal of Electronic Materials (2008)

  7. No Access

    Article

    Imaging one-dimensional and two-dimensional planar photodiode detectors fabricated by ion milling molecular beam epitaxy CdHgTe

    Imaging one-dimensional (1-D) and two-dimensional (2-D) arrays of mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) planar photodiodes were fabricated by ion milling of vacancy-doped molecular...

    R. Haakenaasen, H. Steen, E. Selvig, T. Lorentzen… in Journal of Electronic Materials (2005)